发明申请
- 专利标题： SEMICONDUCTOR PROCESS
- 专利标题（中）： 半导体工艺
-
申请号： US13220692申请日： 2011-08-30
-
公开(公告)号： US20130052825A1公开(公告)日： 2013-02-28
- 发明人: Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chun-Wei Hsu , Yen-Ming Chen , Chih-Hsun Lin , Chang-Hung Kung
- 申请人： Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chun-Wei Hsu , Yen-Ming Chen , Chih-Hsun Lin , Chang-Hung Kung
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A semiconductor process includes the following steps. A first gate structure and a second gate structure are formed on a substrate, wherein the top of the first gate structure includes a cap layer, so that the vertical height of the first gate structure is higher than the vertical height of the second gate structure. An interdielectric layer is formed on the substrate. A first chemical mechanical polishing process is performed to expose the top surface of the cap layer. A second chemical mechanical polishing process is performed to expose the top surface of the second gate structure or an etching process is performed to remove the interdielectric layer located on the second gate structure. A second chemical mechanical polishing process is then performed to remove the cap layer.
公开/授权文献
- US08647986B2 Semiconductor process 公开/授权日：2014-02-11
信息查询
IPC分类:
