发明申请
US20130065036A1 GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL, AND GALLIUM NITRIDE CRYSTAL
审中-公开
13号氮化钛晶体基板，13号氮化硅晶体和氮化镓晶体的制造方法
- 专利标题： GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL, AND GALLIUM NITRIDE CRYSTAL
- 专利标题（中）： 13号氮化钛晶体基板，13号氮化硅晶体和氮化镓晶体的制造方法
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申请号： US13603703申请日： 2012-09-05
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公开(公告)号： US20130065036A1公开(公告)日： 2013-03-14
- 发明人: Masahiro HAYASHI , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
- 申请人： Masahiro HAYASHI , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-201205 20110914
- 主分类号： C01B21/06
- IPC分类号： C01B21/06 ; C30B19/02 ; C30B29/40
摘要：
A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.