发明申请
US20130075892A1 Method for Three Dimensional Integrated Circuit Fabrication 审中-公开
三维集成电路制作方法

Method for Three Dimensional Integrated Circuit Fabrication
摘要:
A method for fabricating three dimensional integrated circuits comprises providing a wafer stack wherein a plurality of semiconductor dies are mounted on a first semiconductor die, forming a molding compound layer on the first side of the first semiconductor die, wherein the plurality of semiconductor dies are embedded in the molding compound layer. The method further comprises grinding a second side of the first semiconductor die until a plurality of through vias become exposed, attaching the wafer stack to a tape frame and dicing the wafer stack to separate the wafer stack into a plurality of individual packages.
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