发明申请
- 专利标题: Method for Three Dimensional Integrated Circuit Fabrication
- 专利标题(中): 三维集成电路制作方法
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申请号: US13246553申请日: 2011-09-27
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公开(公告)号: US20130075892A1公开(公告)日: 2013-03-28
- 发明人: Jing-Cheng Lin , Weng-Jin Wu , Ying-Ching Shih , Jui-Pin Hung , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
- 申请人: Jing-Cheng Lin , Weng-Jin Wu , Ying-Ching Shih , Jui-Pin Hung , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/50
摘要:
A method for fabricating three dimensional integrated circuits comprises providing a wafer stack wherein a plurality of semiconductor dies are mounted on a first semiconductor die, forming a molding compound layer on the first side of the first semiconductor die, wherein the plurality of semiconductor dies are embedded in the molding compound layer. The method further comprises grinding a second side of the first semiconductor die until a plurality of through vias become exposed, attaching the wafer stack to a tape frame and dicing the wafer stack to separate the wafer stack into a plurality of individual packages.
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