发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13252346申请日： 2011-10-04
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公开(公告)号： US20130082309A1公开(公告)日： 2013-04-04
- 发明人: Lilly SU , Pang-Yen TSAI , Tze-Liang LEE , Chii-Horng LI , Yen-Ru LEE , Ming-Hua YU
- 申请人： Lilly SU , Pang-Yen TSAI , Tze-Liang LEE , Chii-Horng LI , Yen-Ru LEE , Ming-Hua YU
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336 ; H01L21/02
摘要：
A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of the substrate to enhance carrier mobility and upgrade the device performance. The improved formation method is achieved by providing a treatment to redistribute at least a portion of the corner in the cavity.
公开/授权文献
- US08927374B2 Semiconductor device and fabrication method thereof 公开/授权日：2015-01-06
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