公开(公告)号：US20130082309A1

公开(公告)日：2013-04-04

申请号：US13252346

申请日：2011-10-04

申请人： Lilly SU ,  Pang-Yen TSAI ,  Tze-Liang LEE ,  Chii-Horng LI ,  Yen-Ru LEE ,  Ming-Hua YU

发明人： Lilly SU ,  Pang-Yen TSAI ,  Tze-Liang LEE ,  Chii-Horng LI ,  Yen-Ru LEE ,  Ming-Hua YU

IPC分类号： H01L29/772 ,  H01L21/336 ,  H01L21/02

CPC分类号： H01L29/7848 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/0617 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0843 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7835

摘要： A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of the substrate to enhance carrier mobility and upgrade the device performance. The improved formation method is achieved by providing a treatment to redistribute at least a portion of the corner in the cavity.

摘要翻译： 公开了一种制造半导体器件的方法。 应变材料形成在衬底的空腔中并与衬底中的隔离结构相邻。 应变材料在基底表面上方有一角。 所公开的方法提供了一种用于在隔离结构附近形成应变材料的改进方法，其中在衬底的空腔中增加部分以增强载体移动性并提高器件性能。 改进的形成方法通过提供一种处理来重新分布空腔中角部的至少一部分来实现。

公开(公告)号：US20130084682A1

公开(公告)日：2013-04-04

申请号：US13248319

申请日：2011-09-29

申请人： Yen-Ru LEE ,  Ming-Hua YU ,  Tze-Liang LEE ,  Chii-Horng LI ,  Pang-Yen TSAI ,  Lilly SU ,  Yi-Hung LIN ,  Yu-Hung CHENG

发明人： Yen-Ru LEE ,  Ming-Hua YU ,  Tze-Liang LEE ,  Chii-Horng LI ,  Pang-Yen TSAI ,  Lilly SU ,  Yi-Hung LIN ,  Yu-Hung CHENG

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7845 ,  H01L29/7846

摘要： A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of a substrate to enhance carrier mobility and upgrade the device performance. In an embodiment, the improved formation method is achieved using an etching process to redistribute the strained material by removing at least a portion of the corner to be located in the cavity.

摘要翻译： 公开了一种制造半导体器件的方法。 应变材料形成在衬底的空腔中并与衬底中的隔离结构相邻。 应变材料在基底表面上方有一角。 所公开的方法提供了一种用于形成邻近隔离结构的应变材料的改进方法，其中衬底的腔中具有增加的部分，以增强载体移动性并提高器件性能。 在一个实施例中，改进的形成方法是通过使用蚀刻工艺来实现的，该蚀刻工艺通过去除位于空腔中的角部的至少一部分来重新分布应变材料。