发明申请
- 专利标题: PHOTOELECTRIC CONVERSION DEVICE
- 专利标题(中): 光电转换器件
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申请号: US13615700申请日: 2012-09-14
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公开(公告)号: US20130082344A1公开(公告)日: 2013-04-04
- 发明人: Yoichiro Nuwasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
- 申请人: Yoichiro Nuwasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2011-216412 20110930
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232
摘要:
A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
公开/授权文献
- US09437768B2 Photoelectric conversion device 公开/授权日:2016-09-06