发明申请
- 专利标题： Spin injection layer robustness for microwave assisted magnetic recording
- 专利标题（中）： 微波辅助磁记录的自旋注入层鲁棒性
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申请号： US13200844申请日： 2011-10-03
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公开(公告)号： US20130082787A1公开(公告)日： 2013-04-04
- 发明人: Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
- 申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
- 专利权人： Kabushiki Kaisha Toshiba,TDK Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,TDK Corporation
- 主分类号： H03B7/00
- IPC分类号： H03B7/00 ; C23C14/14 ; C23C14/35 ; B05D5/00 ; B05D3/02
摘要：
A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.
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