发明申请
- 专利标题： Threshold Voltage Adjustment For Thin Body Mosfets
- 专利标题（中）： 薄体硅片的阈值电压调整
-
申请号： US13625350申请日： 2012-09-24
-
公开(公告)号： US20130105896A1公开(公告)日： 2013-05-02
- 发明人: MaryJane Brodsky , Ming Cai , Dechao Guo , William K. Henson , Shreesh Narasimha , Yue Liang , Liyang Song , Yanfeng Wang , Chun-Chen Yeh
- 申请人： MaryJane Brodsky , Ming Cai , Dechao Guo , William K. Henson , Shreesh Narasimha , Yue Liang , Liyang Song , Yanfeng Wang , Chun-Chen Yeh
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A structure includes a substrate; a transistor disposed over the substrate, the transistor comprising a fin comprised of Silicon that is implanted with Carbon; and a gate dielectric layer and gate metal layer overlying a portion of the fin that defines a channel of the transistor. In the structure a concentration of Carbon within the fin is selected to establish a desired voltage threshold of the transistor.
信息查询
IPC分类:
