Invention Application
US20130113078A1 POLYSILICON-INSULATOR-SILICON CAPACITOR IN A SIGE HBT PROCESS AND MANUFACTURING METHOD THEREOF
审中-公开
信号HBT工艺中的多晶硅绝缘体硅电容器及其制造方法
- Patent Title: POLYSILICON-INSULATOR-SILICON CAPACITOR IN A SIGE HBT PROCESS AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 信号HBT工艺中的多晶硅绝缘体硅电容器及其制造方法
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Application No.: US13613209Application Date: 2012-09-13
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Publication No.: US20130113078A1Publication Date: 2013-05-09
- Inventor: Donghua Liu , Wenting Duan , Wensheng Qian , Jun Hu , Jing Shi
- Applicant: Donghua Liu , Wenting Duan , Wensheng Qian , Jun Hu , Jing Shi
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Current Assignee: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Current Assignee Address: CN Shanghai
- Priority: CN201110343136.9 20111103
- Main IPC: H01L29/92
- IPC: H01L29/92 ; H01L21/02
Abstract:
A PIS capacitor in a SiGe HBT process is disclosed, wherein the PIS capacitor includes: a silicon substrate; a P-well and shallow trench isolations formed in the silicon substrate; a P-type heavily doped region formed in an upper portion of the P-well; an oxide layer and a SiGe epitaxial layer formed above the P-type heavily doped region; spacers formed on sidewalls of the oxide layer and the SiGe epitaxial layer; and contact holes for picking up the P-well and the SiGe epitaxial layer and connecting each of the P-well and the SiGe epitaxial layer to a metal wire. A method of manufacturing the PIS capacitor is also disclosed. The PIS capacitor of the present invention is manufactured by using SiGe HBT process, thus providing one more device option for the SiGe HBT process.
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