Invention Application
- Patent Title: SELF-LEVELING PLANARIZATION MATERIALS FOR MICROELECTRONIC TOPOGRAPHY
- Patent Title (中): 用于微电子地形的自平衡平面化材料
-
Application No.: US13672527Application Date: 2012-11-08
-
Publication No.: US20130113086A1Publication Date: 2013-05-09
- Inventor: Dongshun Bai , Xie Shao , Michelle Fowler , Tingji Tang
- Applicant: Brewer Science Inc.
- Applicant Address: US MO Rolla
- Assignee: BREWER SCIENCE INC.
- Current Assignee: BREWER SCIENCE INC.
- Current Assignee Address: US MO Rolla
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L29/02 ; H01L21/31
Abstract:
Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.
Public/Granted literature
- US08865599B2 Self-leveling planarization materials for microelectronic topography Public/Granted day:2014-10-21
Information query
IPC分类:
