公开(公告)号：US20240427240A1

公开(公告)日：2024-12-26

申请号：US18747908

申请日：2024-06-19

Applicant: Brewer Science, Inc.

Inventor： Reuben T. Chacko

IPC: G03F7/038 ,  C08F220/18 ,  C09D133/10 ,  G03F7/16

Abstract: Materials and methods for modifying surfaces in order to change surface energy are provided. These surface properties cause the surface to become more hydrophobic or oleophobic after light exposure. The ability to change surface energy upon exposure allows these materials to be patterned and enables a variety of uses, notably for use on semiconductor substrates in photolithography.

公开(公告)号：US11574805B2

公开(公告)日：2023-02-07

申请号：US16865159

申请日：2020-05-01

Applicant: Brewer Science, Inc.

Inventor： Jinhua Dai ,  Joyce A. Lowes ,  Reuben Chacko

IPC: H01L21/02 ,  C08F220/68 ,  H01L23/31 ,  H01L23/29 ,  C09D133/16

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

公开(公告)号：US20220195238A1

公开(公告)日：2022-06-23

申请号：US17559988

申请日：2021-12-22

Applicant: Brewer Science, Inc.

Inventor： Reuben T. Chacko ,  Tantiboro Ouattara ,  Andrea M. Chacko ,  Yichen Liang ,  Kelsey Brakensiek

IPC: C09D183/04 ,  G03F7/20 ,  C08G77/20

Abstract: Silicon hardmasks with a single-component polymer are disclosed. These hardmasks provide high optical homogeneity and high chemical homogeneity, thus minimizing or avoiding negative stochastic effects on feature critical dimension. The hardmasks further provide low porosity, higher density, and high silicon content and improve performance factors such as LER/LWR, defectivity, uniformity, and DoF.

公开(公告)号：US20210332188A1

公开(公告)日：2021-10-28

申请号：US17241174

申请日：2021-04-27

Applicant: Brewer Science, Inc.

Inventor： Luke M. Prenger ,  Qi Wu ,  Xiao Liu

IPC: C08G73/00 ,  C09J179/00 ,  B32B43/00 ,  B32B7/12 ,  B32B17/06 ,  H01L21/683

Abstract: The materials and methods disclosed can be used for applications such as temporary bond and debond of semiconductor and display substrates. These materials have sufficiently low melt rheologies to be used as a bonding layer and can crosslink/cure to allow for reduction in material flow over long periods of time. This class of materials also incorporates the ability to be used as a single-layer system for debonding purposes and typically uses laser debonding for its release mechanism. These materials also allow for solvent cleanability using very mild acidic conditions instead of the typical harsh conditions used on curable layers.

公开(公告)号：US11078337B2

公开(公告)日：2021-08-03

申请号：US15841472

申请日：2017-12-14

Applicant: Brewer Science Inc.

Inventor： Daniel Sweat ,  Kui Xu

IPC: C08G81/00 ,  C08G81/02 ,  C08F293/00 ,  G03F7/16 ,  G03F7/20 ,  C08L87/00 ,  H01L21/027 ,  G03F7/32 ,  C08G63/08 ,  G03F7/00 ,  C08L53/00 ,  C08G65/40 ,  B32B27/28

Abstract: The present invention is broadly concerned with novel directed self-assembly compositions, processes utilizing those compositions, and the resulting structures that are formed. The composition comprises a block copolymer of polystyrene and a polymethylmethacrylate block with polylactic acid side chains (“PS-b-P(MMA-LA)”). The block copolymer is capable of crosslinking and micro-phase separating into lines and spaces measuring about 10-nm or smaller with sub-20 nm L0 capability. Additionally, PS-b-P(MMA-LA) can be thermally annealed without a top-coat for simpler processing than the prior art. The polylactic acid side chains also increase the etch rate of the poly(methylmethacrylate) block when exposed to oxygen plasma, as well as lower the Tg.

公开(公告)号：US20210125829A1

公开(公告)日：2021-04-29

申请号：US17079916

申请日：2020-10-26

Applicant: Brewer Science, Inc.

Inventor： Ming Luo ,  Yubao Wang ,  Kaumba Sakavuyi ,  Vandana Krishnamurthy

IPC: H01L21/033 ,  H01L21/027 ,  G03F1/46

Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.

公开(公告)号：US10961383B2

公开(公告)日：2021-03-30

申请号：US16133051

申请日：2018-09-17

Applicant: Brewer Science, Inc.

Inventor： Kui Xu ,  Richard Elsworth Daugherty, Jr. ,  Daniel Patrick Sweat ,  Mary Ann Hockey ,  Eric Calderas ,  Megan Bennett

IPC: C08L53/00 ,  C08F20/18 ,  C08F26/06 ,  C08G63/06 ,  C08F20/26

Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.

公开(公告)号：US10854451B2

公开(公告)日：2020-12-01

申请号：US15188620

申请日：2016-06-21

Applicant: Brewer Science Inc.

Inventor： Xing-Fu Zhong ,  Runhui Huang ,  Boyu Zhang

IPC: H01L21/033 ,  H01L21/02 ,  C09D125/08 ,  C09D131/02 ,  C09D179/08

Abstract: Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.

公开(公告)号：US10331032B2

公开(公告)日：2019-06-25

申请号：US13867815

申请日：2013-04-22

Applicant: Brewer Science Inc.

Inventor： Joyce Lowes ,  Jinhua Dai ,  Alice Guerrero

IPC: G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/095 ,  H01L21/266

Abstract: Photosensitive, developer-soluble bottom anti-reflective coatings are described. Compositions and methods of forming the same are also disclosed along with resulting microelectronic structures. The anti-reflective compositions comprise a multi-functional epoxy compound having multiple epoxy moieties pendant therefrom and one or more crosslinkable chromophores bonded thereto. The compounds are dispersed or dissolved in a solvent system with a vinyl ether crosslinker and can be used to create crosslinkable and de-crosslinkable coatings for microelectronics fabrication.

公开(公告)号：US09960038B2

公开(公告)日：2018-05-01

申请号：US13335357

申请日：2011-12-22

Applicant: Carlton Ashley Washburn ,  James E. Lamb, III ,  Nickolas L. Brakensiek ,  Qin Lin ,  Yubao Wang ,  Vandana Krishnamurthy ,  Claudia Scott

Inventor： Carlton Ashley Washburn ,  James E. Lamb, III ,  Nickolas L. Brakensiek ,  Qin Lin ,  Yubao Wang ,  Vandana Krishnamurthy ,  Claudia Scott

IPC: G03F7/26 ,  H01L21/033 ,  C09D5/00 ,  G03F7/11 ,  G03F7/00 ,  G03F7/40

CPC classification number: H01L21/0337 ,  C09D5/00 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338 ,  Y10T428/24612

Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.