发明申请
US20130115733A1 ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME
审中-公开
蚀刻组合物和使用该薄膜晶体管制造薄膜晶体管的方法
- 专利标题： ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME
- 专利标题（中）： 蚀刻组合物和使用该薄膜晶体管制造薄膜晶体管的方法
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申请号： US13547783申请日： 2012-07-12
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公开(公告)号： US20130115733A1公开(公告)日： 2013-05-09
- 发明人: Bong-Kyun KIM , Hong Sick PARK , Wang Woo LEE , Young Woo PARK , Shin Il CHOI , Sang-Woo KIM , Ki-Beom LEE , Dae-Woo LEE , Sam-Young CHO , Jeong-Heon CHOI
- 申请人： Bong-Kyun KIM , Hong Sick PARK , Wang Woo LEE , Young Woo PARK , Shin Il CHOI , Sang-Woo KIM , Ki-Beom LEE , Dae-Woo LEE , Sam-Young CHO , Jeong-Heon CHOI
- 申请人地址： KR Incheon-city KR Yongin-City
- 专利权人： DONGJIN SEMICHEM CO., LTD,SAMSUNG DISPLAY CO., LTD.
- 当前专利权人： DONGJIN SEMICHEM CO., LTD,SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址： KR Incheon-city KR Yongin-City
- 优先权： KR10-2011-0116085 20111108
- 主分类号： H01L21/465
- IPC分类号： H01L21/465 ; C09K13/06 ; C09K13/00
摘要：
Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH4)2)S2O8, an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.