发明申请
US20130122707A1 METHODS OF POLYMERS DEPOSITION FOR FORMING REDUCED CRITICAL DIMENSIONS
审中-公开
聚合物沉积形成减少关键尺寸的方法
- 专利标题： METHODS OF POLYMERS DEPOSITION FOR FORMING REDUCED CRITICAL DIMENSIONS
- 专利标题（中）： 聚合物沉积形成减少关键尺寸的方法
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申请号： US13656589申请日： 2012-10-19
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公开(公告)号： US20130122707A1公开(公告)日： 2013-05-16
- 发明人: Daisuke Shimizu , Jong Mun Kim
- 申请人： Daisuke Shimizu , Jong Mun Kim
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/302
摘要：
Methods of polymer deposition for forming reduced critical dimensions are described. In one embodiment, a substrate is provided into a chamber, the substrate having a patterned layer disposed on an underlying layer formed thereon. The patterned layer includes a plurality of openings, each opening having a sidewall, a bottom, and a critical dimension. A gas mixture is provided into the chamber, the gas mixture having an etching gas and a polymer control gas. The polymer control gas includes a polymerizing fluorocarbon CxFy gas and a C—H bond containing gas. A plasma is formed with the gas mixture and a conformal polymer layer is deposited in the presence of the plasma on the patterned layer to form a reduced critical dimension in each opening. The reduced critical dimension is smaller than the corresponding critical dimension of the opening.