发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE HAVING A POLYSILICON STRUCTURE AND METHOD OF FORMING SAME
- 专利标题（中）： 具有多晶硅结构的半导体结构及其形成方法
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申请号： US13314462申请日： 2011-12-08
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公开(公告)号： US20130146993A1公开(公告)日： 2013-06-13
- 发明人: Che-Cheng CHANG , Po-chi WU , Buh-Kuan FANG , Jr-Jung LIN , Ryan Chia-Jen CHEN
- 申请人： Che-Cheng CHANG , Po-chi WU , Buh-Kuan FANG , Jr-Jung LIN , Ryan Chia-Jen CHEN
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
The present application discloses a method of forming a semiconductor structure. In at least one embodiment, the method includes forming a polysilicon layer over a substrate. A mask layer is formed over the polysilicon layer. The mask layer is patterned to form a patterned mask layer. A polysilicon structure is formed by etching the polysilicon layer using the patterned mask layer as a mask. The polysilicon structure has an upper surface and a lower surface, and the etching of the polysilicon layer is arranged to cause a width of the upper surface of the polysilicon structure greater than that of the lower surface of the polysilicon structure.
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