A method of programming a variable resistance nonvolatile memory element that removes a defect in a resistance change, ensures an operation widow, and stably sustains a resistance change operation, the method including: applying, when the detect in the resistance change occurs in the variable resistance nonvolatile memory element, a recovery voltage pulse at least once to the variable resistance nonvolatile memory element, the recovery voltage pulse including: a first recovery voltage pulse that has an amplitude greater than amplitudes of a normal high resistance writing voltage pulse and a low resistance writing voltage pulse; and a second recovery voltage pulse that is the low resistance writing voltage pulse following the first recovery voltage pulse.