发明申请
US20130148429A1 MEMORY DEVICE, METHOD OF PERFORMING READ OR WRITE OPERATION AND MEMORY SYSTEM INCLUDING THE SAME
有权
存储器件,执行读或写操作的方法和包括其的存储器系统
- 专利标题: MEMORY DEVICE, METHOD OF PERFORMING READ OR WRITE OPERATION AND MEMORY SYSTEM INCLUDING THE SAME
- 专利标题(中): 存储器件,执行读或写操作的方法和包括其的存储器系统
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申请号: US13705143申请日: 2012-12-04
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公开(公告)号: US20130148429A1公开(公告)日: 2013-06-13
- 发明人: Chan-Kyung Kim , Yun-Sang Lee , Chul-Woo Park , Hong-Sun Hwang
- 申请人: Chan-Kyung Kim , Yun-Sang Lee , Chul-Woo Park , Hong-Sun Hwang
- 优先权: KR10-2012-0118306 20121024
- 主分类号: G11C7/06
- IPC分类号: G11C7/06 ; G11C11/16 ; G11C16/26 ; G11C13/00
摘要:
Provided is a memory device having a first switch configured to receive a first CSL signal to input or output data. A second switch is configured to receive a second CSL signal. A sensing and latch circuit (SLC) is coupled between the first and second switches. And at least one memory cell is coupled to the second switch. The second switch is configured to control timing of read or write operations of the at least one memory cell in response to the second CSL signal, e.g., where a read operation can be performed in not more than about 5 ns. The SLC operates as a latch in a write mode and as an amplifier in a read mode. The memory device may comprise part of a memory system or other apparatus including such memory device or system. Methods of performing read and write operations using such memory device are also provided.