发明申请
- 专利标题： BORDERLESS CONTACT STRUCTURE
- 专利标题（中）： 无边界接触结构
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申请号： US13348894申请日： 2012-01-12
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公开(公告)号： US20130181261A1公开(公告)日： 2013-07-18
- 发明人: VEERARAGHAVAN S. BASKER , David V. Horak , Charles W. Koburger, III , Shom Ponoth , Chih-Chao Yang
- 申请人： VEERARAGHAVAN S. BASKER , David V. Horak , Charles W. Koburger, III , Shom Ponoth , Chih-Chao Yang
- 申请人地址： US NY Armont
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armont
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/20
摘要：
A borderless contact structure or partially borderless contact structure and methods of manufacture are disclosed. The method includes forming a gate structure and a space within the gate structure, defined by spacers. The method further includes blanket depositing a sealing material in the space, over the gate structure and on a semiconductor material. The method further includes removing the sealing material from over the gate structure and on the semiconductor material, leaving the sealing material within the space. The method further includes forming an interlevel dielectric material over the gate structure. The method further includes patterning the interlevel dielectric material to form an opening exposing the semiconductor material and a portion of the gate structure. The method further includes forming a contact in the opening formed in the interlevel dielectric material.
公开/授权文献
- US09620619B2 Borderless contact structure 公开/授权日：2017-04-11
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