发明申请
- 专利标题： SILICON CARBON FILM STRUCTURE AND METHOD
- 专利标题（中）： 硅碳膜结构与方法
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申请号： US13360823申请日： 2012-01-30
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公开(公告)号： US20130193492A1公开(公告)日： 2013-08-01
- 发明人: THOMAS N. ADAM , Kangguo Cheng , Hong He , Ali Khakifirooz , Jinghong Li , Alexander Reznicek
- 申请人： THOMAS N. ADAM , Kangguo Cheng , Hong He , Ali Khakifirooz , Jinghong Li , Alexander Reznicek
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/20
摘要：
An improved silicon carbon film structure is disclosed. The film structure comprises multiple layers of silicon carbon and silicon. The multiple layers form stress film structures that have increased substitutional carbon content, and serve to induce stresses that improve carrier mobility for certain types of field effect transistors.
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