发明申请
US20130208533A1 MEMORY HAVING READ ASSIST DEVICE AND METHOD OF OPERATING THE SAME
有权
具有读取辅助装置的存储器及其操作方法
- 专利标题: MEMORY HAVING READ ASSIST DEVICE AND METHOD OF OPERATING THE SAME
- 专利标题(中): 具有读取辅助装置的存储器及其操作方法
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申请号: US13372099申请日: 2012-02-13
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公开(公告)号: US20130208533A1公开(公告)日: 2013-08-15
- 发明人: Jung-Ping YANG , Hong-Chen CHENG , Chih-Chieh CHIU , Chia-En HUANG , Cheng Hung LEE
- 申请人: Jung-Ping YANG , Hong-Chen CHENG , Chih-Chieh CHIU , Chia-En HUANG , Cheng Hung LEE
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C11/40
- IPC分类号: G11C11/40 ; G11C7/12 ; G11C7/00
摘要:
A memory includes a first bit line, a memory cell coupled to the first bit line, and a read assist device coupled to the first bit line. The read assist device is configured to pull a first voltage on the first bit line toward a predetermined voltage in response to a first datum being read out from the memory cell. The read assist device includes a first circuit configured to establish a first current path between the first bit line and a node of the predetermined voltage during a first stage. The read assist device further includes a second circuit configured to establish a second current path between the first bit line and the node of the predetermined voltage during a second, subsequent stage.