PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES

Invention Application

US20130224961A1 PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES 有权

Title translation: 微波谐振器等离子体等离子体调谐器

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Patent Title: PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES
Patent Title (中): 微波谐振器等离子体等离子体调谐器
Application No.: US13842532

Application Date: 2013-03-15
Publication No.: US20130224961A1

Publication Date: 2013-08-29
Inventor: Jianping Zhao , Lee Chen , Merritt Funk , Iwao Toshihiko , Peter L. G. Ventzek
Applicant: Tokyo Electron Limited
Applicant Address: JP Tokyo
Assignee: TOKYO ELECTRON LIMITED
Current Assignee: TOKYO ELECTRON LIMITED
Current Assignee Address: JP Tokyo
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/67

PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES

Abstract:

A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.

Abstract(Chinese):

谐振器系统设置有一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。谐振器系统可以使用一个或多个接口和隔离组件耦合到处理室，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐杆。等离子体调谐杆可以被配置为将EM能量从谐振腔耦合到处理室内的处理空间。

Public/Granted literature

US09728416B2 Plasma tuning rods in microwave resonator plasma sources Public/Granted day:2017-08-08

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀