发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件和半导体器件的制造方法
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申请号： US13900904申请日： 2013-05-23
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公开(公告)号： US20130256690A1公开(公告)日： 2013-10-03
- 发明人: NORIKAZU NAKAMURA , SHIROU OZAKI , MASAYUKI TAKEDA , TOYOO MIYAJIMA , TOSHIHIRO OHKI , MASAHITO KANAMURA , KENJI IMANISHI , TOSHIHIDE KIKKAWA , KEIJI WATANABE
- 申请人： FUJITSU LIMITED
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/78 ; H01L29/20
摘要：
A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.
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