公开(公告)号：US20130256690A1

公开(公告)日：2013-10-03

申请号：US13900904

申请日：2013-05-23

申请人： FUJITSU LIMITED

发明人： NORIKAZU NAKAMURA ,  SHIROU OZAKI ,  MASAYUKI TAKEDA ,  TOYOO MIYAJIMA ,  TOSHIHIRO OHKI ,  MASAHITO KANAMURA ,  KENJI IMANISHI ,  TOSHIHIDE KIKKAWA ,  KEIJI WATANABE

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/20

CPC分类号： H01L21/28264 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.

摘要翻译： 半导体器件可以包括形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，与第一半导体层或第二半导体层接触的源电极和漏电极， 第二半导体层，形成在形成在第二半导体层中的开口的内表面上并在第二半导体层上方的绝缘膜，经由绝缘膜形成在开口中的栅电极和形成在绝缘膜上的保护膜， 包括含有碳作为主要成分的非晶膜。