发明申请
- 专利标题： INTERCONNECT STRUCTURE HAVING SMALLER TRANSITION LAYER VIA
- 专利标题（中）： 具有小型过渡层的互连结构
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申请号： US13438565申请日： 2012-04-03
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公开(公告)号： US20130256902A1公开(公告)日： 2013-10-03
- 发明人: Lee-Chung LU , Wen-Hao CHEN , Yuan-Te HOU , Fang-Yu FAN , Yu-Hsiang KAO , Dian-Hau CHEN , Shyue-Shyh LIN , Chii-Ping CHEN
- 申请人： Lee-Chung LU , Wen-Hao CHEN , Yuan-Te HOU , Fang-Yu FAN , Yu-Hsiang KAO , Dian-Hau CHEN , Shyue-Shyh LIN , Chii-Ping CHEN
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An interconnect structure including a bottom layer over a substrate, where the bottom layer includes at least one bottom layer line and at least one bottom layer via. The interconnect structure further includes a transition layer over the bottom layer, where the transition layer includes at least one transition layer line and at least one transition layer via. The interconnect structure further includes a top layer over the transition layer, where the top layer includes at least one top layer line and at least one top layer via. The at least one transition layer via has a cross sectional area at least 30% less than a cross sectional area of the at least one top layer via.
公开/授权文献
- US09553043B2 Interconnect structure having smaller transition layer via 公开/授权日：2017-01-24