- 专利标题: INTEGRATED CIRCUIT WITH ON CHIP PLANAR DIODE AND CMOS DEVICES
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申请号: US13478080申请日: 2012-05-22
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公开(公告)号: US20130313651A1公开(公告)日: 2013-11-28
- 发明人: Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人: Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/07
- IPC分类号: H01L27/07 ; H01L21/8238
摘要:
An electrical circuit, planar diode, and method of forming a diode and one or more CMOS devices on the same chip. The method includes electrically isolating a portion of a substrate in a diode region from other substrate regions. The method also includes recessing the substrate in the diode region. The method further includes epitaxially forming in the diode region a first doped layer above the substrate and epitaxially forming in the diode region a second doped layer above the first doped layer.
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