发明申请
US20140001514A1 Semiconductor Device and Method for Producing a Doped Semiconductor Layer
审中-公开
用于制造掺杂半导体层的半导体器件和方法
- 专利标题： Semiconductor Device and Method for Producing a Doped Semiconductor Layer
- 专利标题（中）： 用于制造掺杂半导体层的半导体器件和方法
-
申请号： US13539944申请日： 2012-07-02
-
公开(公告)号： US20140001514A1公开(公告)日： 2014-01-02
- 发明人: Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
- 申请人： Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/36
- IPC分类号： H01L29/36 ; H01L21/225
摘要：
A semiconductor device includes a device region. The device region includes at least one device region section including dopant atoms of a first doping type and with a first doping concentration of at least 1E16 cm−3 and dopant atoms of a second doping type and with a second doping concentration of at least 1E16 cm−3.
信息查询
IPC分类:
