Invention Application
- Patent Title: THIN-FILM BALLISTIC SEMICONDUCTOR WITH ASYMMETRIC CONDUCTANCE
- Patent Title (中): 具有不对称导体的薄膜压电半导体
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Application No.: US13565065Application Date: 2012-08-02
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Publication No.: US20140034909A1Publication Date: 2014-02-06
- Inventor: Joseph V. Mantese , Eric S. Landry , Slade R. Culp
- Applicant: Joseph V. Mantese , Eric S. Landry , Slade R. Culp
- Applicant Address: US CT Windsor Locks
- Assignee: HAMILTON SUNDSTRAND CORPORATION
- Current Assignee: HAMILTON SUNDSTRAND CORPORATION
- Current Assignee Address: US CT Windsor Locks
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A thermoelectric structure comprises a thin thermoelectric film extending in a plane between parallel first and second shorting bars. A plurality of curved ballistic scattering guides are formed in a magnetic field region of the thin thermoelectric film subjected to a local, substantially uniform, nonzero magnetic field normal to the plane of the thin thermoelectric film.
Information query
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