THIN-FILM BALLISTIC SEMICONDUCTOR WITH ASYMMETRIC CONDUCTANCE
    5.
    发明申请
    THIN-FILM BALLISTIC SEMICONDUCTOR WITH ASYMMETRIC CONDUCTANCE 审中-公开
    具有不对称导体的薄膜压电半导体

    公开(公告)号:US20140034909A1

    公开(公告)日:2014-02-06

    申请号:US13565065

    申请日:2012-08-02

    CPC classification number: H01L35/00 H01L37/00

    Abstract: A thermoelectric structure comprises a thin thermoelectric film extending in a plane between parallel first and second shorting bars. A plurality of curved ballistic scattering guides are formed in a magnetic field region of the thin thermoelectric film subjected to a local, substantially uniform, nonzero magnetic field normal to the plane of the thin thermoelectric film.

    Abstract translation: 热电结构包括在平行的第一和第二短路棒之间的平面中延伸的薄的热电膜。 多个弯曲的弹道散射引导件形成在薄的热电薄膜的磁场区域中,其经受与薄的热电膜的平面垂直的局部的,基本均匀的非零的磁场。

    THERMOELECTRIC DEVICE
    6.
    发明申请
    THERMOELECTRIC DEVICE 审中-公开
    热电装置

    公开(公告)号:US20110036384A1

    公开(公告)日:2011-02-17

    申请号:US12539683

    申请日:2009-08-12

    Applicant: Slade R. Culp

    Inventor: Slade R. Culp

    CPC classification number: H01L35/32 H01L35/325

    Abstract: A thermoelectric device uses two semiconductor materials, joined together. Each of the semiconductor materials is connected to a heat source, and the combined device creates a thermoelectric effect. At least one of the semiconductor materials is modified to improve the efficiency of the thermoelectric device.

    Abstract translation: 热电装置使用两种半导体材料,连接在一起。 每个半导体材料连接到热源,并且组合的装置产生热电效应。 半导体材料中的至少一种被改性以提高热电装置的效率。

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