发明申请
- 专利标题： FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 场效应晶体管及其制造方法
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申请号： US14049816申请日： 2013-10-09
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公开(公告)号： US20140035044A1公开(公告)日： 2014-02-06
- 发明人: Hokyun AHN , Jong-Won LIM , Hyung Sup YOON , Byoung-Gue MIN , Sang-Heung LEE , Hae Cheon KIM , Eun Soo NAM
- 申请人： Electronics and Telecommunications Research Institute
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2010-0130291 20101217
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Disclosed are a field-effect transistor and a manufacturing method thereof. The disclosed field-effect transistor includes: a semiconductor substrate; a source ohmic metal layer formed on one side of the semiconductor substrate; a drain ohmic metal layer formed on another side of the semiconductor substrate; a gate electrode formed between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; an insulating film formed on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and a plurality of field electrodes formed on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.
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