发明申请
- 专利标题： Semiconductor Device and Method of Fabricating the Same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14052691申请日： 2013-10-11
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公开(公告)号： US20140035164A1公开(公告)日： 2014-02-06
- 发明人: Kwang-jin Moon , Byung-lyul Park , Dong-chan Lim , Deok-young Jung , Gil-heyun Choi , Dae-lok Bae , Pil-kyu Kang
- 申请人： Kwang-jin Moon , Byung-lyul Park , Dong-chan Lim , Deok-young Jung , Gil-heyun Choi , Dae-lok Bae , Pil-kyu Kang
- 优先权： KR10-2010-0061080 20100628
- 主分类号： H01L23/522
- IPC分类号： H01L23/522
摘要：
A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure.
公开/授权文献
- US09530726B2 Semiconductor device and method of fabricating the same 公开/授权日：2016-12-27
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