公开(公告)号：US20140035164A1

公开(公告)日：2014-02-06

申请号：US14052691

申请日：2013-10-11

申请人： Kwang-jin Moon ,  Byung-lyul Park ,  Dong-chan Lim ,  Deok-young Jung ,  Gil-heyun Choi ,  Dae-lok Bae ,  Pil-kyu Kang

发明人： Kwang-jin Moon ,  Byung-lyul Park ,  Dong-chan Lim ,  Deok-young Jung ,  Gil-heyun Choi ,  Dae-lok Bae ,  Pil-kyu Kang

IPC分类号： H01L23/522

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure.

摘要翻译： 半导体器件包括具有平面部分的顶表面和由平面部分包围的突出部分的通孔结构，并且包括导电结构，该导电结构包括与通孔的顶表面的至少一部分接触的多条导线 结构体。

公开(公告)号：US09530726B2

公开(公告)日：2016-12-27

申请号：US14052691

申请日：2013-10-11

申请人： Kwang-jin Moon ,  Byung-Iyul Park ,  Dong-chan Lim ,  Deok-young Jung ,  Gil-heyun Choi ,  Dae-lok Bae ,  Pil-kyu Kang

发明人： Kwang-jin Moon ,  Byung-Iyul Park ,  Dong-chan Lim ,  Deok-young Jung ,  Gil-heyun Choi ,  Dae-lok Bae ,  Pil-kyu Kang

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure.

摘要翻译： 半导体器件包括具有平面部分的顶表面和由平面部分包围的突出部分的通孔结构，并且包括导电结构，该导电结构包括与通孔的顶表面的至少一部分接触的多条导线 结构体。

公开(公告)号：US09018768B2

公开(公告)日：2015-04-28

申请号：US13627790

申请日：2012-09-26

申请人： Byung-lyul Park ,  Gil-heyun Choi ,  Suk-chul Bang ,  Kwang-jin Moon ,  Dong-chan Lim ,  Deok-young Jung

发明人： Byung-lyul Park ,  Gil-heyun Choi ,  Suk-chul Bang ,  Kwang-jin Moon ,  Dong-chan Lim ,  Deok-young Jung

IPC分类号： H01L23/48 ,  H01L23/02 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768 ,  H01L25/065

CPC分类号： H01L21/76898 ,  H01L21/76801 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565

摘要： A semiconductor device includes a circuit pattern over a first surface of a substrate, an insulating interlayer covering the circuit pattern, a TSV structure filling a via hole through the insulating interlayer and the substrate, an insulation layer structure on an inner wall of the via hole and on a top surface of the insulating interlayer, a buffer layer on the TSV structure and the insulation layer structure, a conductive structure through the insulation layer structure and a portion of the insulating interlayer to be electrically connected to the circuit pattern, a contact pad onto a bottom of the TSV structure, and a protective layer structure on a second surface the substrate to surround the contact pad.

摘要翻译： 半导体器件包括在衬底的第一表面上的电路图案，覆盖电路图案的绝缘夹层，填充通过绝缘夹层和衬底的通孔的TSV结构，在通孔的内壁上的绝缘层结构 并且在绝缘中间层的上表面上，具有TSV结构和绝缘层结构的缓冲层，通过绝缘层结构的导电结构和电连接到电路图案的绝缘夹层的一部分，接触垫 到TSV结构的底部，以及在第二表面上的保护层结构，以包围接触垫。

公开(公告)号：US20110318922A1

公开(公告)日：2011-12-29

申请号：US13167225

申请日：2011-06-23

申请人： Deok-young Jung ,  Gil-heyun Choi ,  Suk-chul Bang ,  Byung-lyul Park ,  Kwang-jin Moon ,  Dong-chan Lim

发明人： Deok-young Jung ,  Gil-heyun Choi ,  Suk-chul Bang ,  Byung-lyul Park ,  Kwang-jin Moon ,  Dong-chan Lim

IPC分类号： H01L21/283

CPC分类号： H01L21/76802 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/76898

摘要： The methods include forming a semiconductor substrate pattern by etching a semiconductor substrate. The semiconductor pattern has a first via hole that exposes side walls of the semiconductor substrate pattern, and the side walls of the semiconductor substrate pattern exposed by the first via hole have an impurity layer pattern. The methods further include treating upper surfaces of the semiconductor substrate pattern, the treated upper surfaces of the semiconductor substrate pattern being hydrophobic; removing the impurity layer pattern from the side walls of the semiconductor substrate pattern exposed by the first via hole; forming a first insulating layer pattern on the side walls of the semiconductor substrate pattern exposed by the first via hole; and filling a first conductive layer pattern into the first via hole and over the first insulating layer pattern.

摘要翻译： 所述方法包括通过蚀刻半导体衬底形成半导体衬底图案。 半导体图案具有暴露半导体衬底图案的侧壁的第一通孔，并且由第一通孔露出的半导体衬底图案的侧壁具有杂质层图案。 所述方法还包括处理半导体衬底图案的上表面，所处理的半导体衬底图案的上表面是疏水的; 从由第一通孔露出的半导体衬底图案的侧壁去除杂质层图案; 在由第一通孔露出的半导体衬底图案的侧壁上形成第一绝缘层图案; 以及将第一导电层图案填充到第一通孔中并在第一绝缘层图案之上。

公开(公告)号：US08546256B2

公开(公告)日：2013-10-01

申请号：US13167225

申请日：2011-06-23

申请人： Deok-young Jung ,  Gil-heyun Choi ,  Suk-chul Bang ,  Byung-lyul Park ,  Kwang-jin Moon ,  Dong-chan Lim

发明人： Deok-young Jung ,  Gil-heyun Choi ,  Suk-chul Bang ,  Byung-lyul Park ,  Kwang-jin Moon ,  Dong-chan Lim

IPC分类号： H01L21/283

CPC分类号： H01L21/76802 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/76898

摘要： The methods include forming a semiconductor substrate pattern by etching a semiconductor substrate. The semiconductor pattern has a first via hole that exposes side walls of the semiconductor substrate pattern, and the side walls of the semiconductor substrate pattern exposed by the first via hole have an impurity layer pattern. The methods further include treating upper surfaces of the semiconductor substrate pattern, the treated upper surfaces of the semiconductor substrate pattern being hydrophobic; removing the impurity layer pattern from the side walls of the semiconductor substrate pattern exposed by the first via hole; forming a first insulating layer pattern on the side walls of the semiconductor substrate pattern exposed by the first via hole; and filling a first conductive layer pattern into the first via hole and over the first insulating layer pattern.

摘要翻译： 所述方法包括通过蚀刻半导体衬底形成半导体衬底图案。 半导体图案具有暴露半导体衬底图案的侧壁的第一通孔，并且由第一通孔露出的半导体衬底图案的侧壁具有杂质层图案。 所述方法还包括处理半导体衬底图案的上表面，所处理的半导体衬底图案的上表面是疏水的; 从由第一通孔露出的半导体衬底图案的侧壁去除杂质层图案; 在由第一通孔露出的半导体衬底图案的侧壁上形成第一绝缘层图案; 以及将第一导电层图案填充到第一通孔中并在第一绝缘层图案之上。

公开(公告)号：US09064941B2

公开(公告)日：2015-06-23

申请号：US14601215

申请日：2015-01-20

申请人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

发明人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/561 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

公开(公告)号：US08963336B2

公开(公告)日：2015-02-24

申请号：US14333509

申请日：2014-07-16

申请人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

发明人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

IPC分类号： H01L29/40 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/561 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

摘要翻译： 半导体器件包括：基板，包括彼此相对的第一表面和第二表面;延伸穿过基板的通孔电极。 通孔电极具有互连金属层和围绕互连金属层的侧表面的阻挡金属层。 通孔电极的一端在第二表面上方突出。 间隔绝缘层可以设置在通孔电极的外侧壁上。 通孔电极焊盘连接到通孔电极并且在基本平行于第二表面的间隔绝缘层上延伸。 在第二表面上层叠第一氧化硅层和氮化硅层。 第一氧化硅层的厚度大于氮化硅层的厚度。

公开(公告)号：US08697583B2

公开(公告)日：2014-04-15

申请号：US13224737

申请日：2011-09-02

申请人： Kyung-seok Oh ,  Kyung-mun Byun ,  Shin-hye Kim ,  Deok-young Jung ,  Gil-heyun Choi ,  Eunkee Hong

发明人： Kyung-seok Oh ,  Kyung-mun Byun ,  Shin-hye Kim ,  Deok-young Jung ,  Gil-heyun Choi ,  Eunkee Hong

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/76224

摘要： Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.

摘要翻译： 根据本发明的实施方案提供的是氧化促进组合物，形成氧化物层的方法和制造半导体器件的方法。 在本发明的一些实施方案中，氧化促进组合物包括具有AML结构的氧化促进剂，其中L是化学吸附在硅表面，氧化硅，氮化硅或金属上的官能团，A是 一种可热分解的氧化官能团，M是允许A和L彼此共价结合的部分。

公开(公告)号：US20120058647A1

公开(公告)日：2012-03-08

申请号：US13224737

申请日：2011-09-02

申请人： Kyung-seok Oh ,  Kyung-mun Byun ,  Shin-hye Kim ,  Deok-young Jung ,  Gil-heyun Choi ,  Eunkee Hong

发明人： Kyung-seok Oh ,  Kyung-mun Byun ,  Shin-hye Kim ,  Deok-young Jung ,  Gil-heyun Choi ,  Eunkee Hong

IPC分类号： H01L21/316

CPC分类号： H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/76224

摘要： Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.

摘要翻译： 根据本发明的实施方案提供的是氧化促进组合物，形成氧化物层的方法和制造半导体器件的方法。 在本发明的一些实施方案中，氧化促进组合物包括具有AML结构的氧化促进剂，其中L是化学吸附在硅表面，氧化硅，氮化硅或金属上的官能团，A是 一种可热分解的氧化官能团，M是允许A和L彼此共价结合的部分。