发明申请
- 专利标题: CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 电路结构及其制造方法
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申请号: US13615722申请日: 2012-09-14
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公开(公告)号: US20140041919A1公开(公告)日: 2014-02-13
- 发明人: Shang-Feng Huang , Cheng-Po Yu , Jen-Chi Cheng
- 申请人: Shang-Feng Huang , Cheng-Po Yu , Jen-Chi Cheng
- 申请人地址: TW Taoyuan
- 专利权人: UNIMICRON TECHNOLOGY CORP.
- 当前专利权人: UNIMICRON TECHNOLOGY CORP.
- 当前专利权人地址: TW Taoyuan
- 优先权: TW101128625 20120808
- 主分类号: H05K1/11
- IPC分类号: H05K1/11 ; H05K3/10
摘要:
A circuit structure includes an inner circuit layer, a first and a second dielectric layers, a first and a second conductive material layers, and a second and a third conductive layers. The first dielectric layer covers a first conductive layer of the inner circuit layer and has a first surface and first circuit grooves. The first conductive material layer is disposed inside the first circuit grooves. The second conductive layer is disposed on the first surface and includes a signal trace and at least two reference traces. The second dielectric layer covers the first surface and the second conductive layer and has a second surface and second circuit grooves. Widths of the first and the second circuit grooves are smaller than that of the reference traces. The second conductive material layer is disposed inside the second circuit grooves. The third conductive layer is disposed on the second surface.
公开/授权文献
- US08987608B2 Circuit structure and manufacturing method thereof 公开/授权日:2015-03-24
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