发明申请
- 专利标题： Metal-Insulator-Metal Capacitor and Method of Fabricating
- 专利标题（中）： 金属绝缘体 - 金属电容器和制造方法
-
申请号： US13571441申请日： 2012-08-10
-
公开(公告)号： US20140042590A1公开(公告)日： 2014-02-13
- 发明人: Kuo-Ji Chen , Wen-Chuan Chiang , Huey-Chi Chu , Ming-Hsiang Song , Chen-Jong Wang
- 申请人： Kuo-Ji Chen , Wen-Chuan Chiang , Huey-Chi Chu , Ming-Hsiang Song , Chen-Jong Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
Methods and apparatus are disclosed for manufacturing metal-insulator-metal (MIM) capacitors. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, in contact with a sidewall of a via. The sidewall contact or the bottle neck of the electrode may burn out to form a high impedance path when the leakage current exceeds a specification, while the sidewall contact or the bottle neck of the electrode has no impact for normal MIM operations. The MIM capacitors may be used as decoupling capacitors.
公开/授权文献
信息查询
IPC分类:
