发明申请
- 专利标题： MAGNETIC MEMORY DEVICES
- 专利标题（中）： 磁记忆装置
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申请号： US13967340申请日： 2013-08-14
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公开(公告)号： US20140061828A1公开(公告)日： 2014-03-06
- 发明人: WOO CHANG LIM , SANGYONG KIM , Whankyun KIM , SANG HWAN PARK , JEONGHEON PARK
- 申请人： WOO CHANG LIM , SANGYONG KIM , Whankyun KIM , SANG HWAN PARK , JEONGHEON PARK
- 优先权： KR10-2012-0095797 20120830
- 主分类号： H01L43/08
- IPC分类号： H01L43/08
摘要：
A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
公开/授权文献
- US09276198B2 Magnetic memory devices 公开/授权日：2016-03-01