发明申请
US20140077149A1 RESISTANCE MEMORY CELL, RESISTANCE MEMORY ARRAY AND METHOD OF FORMING THE SAME
审中-公开
电阻记忆体，电阻记忆阵列及其形成方法
- 专利标题： RESISTANCE MEMORY CELL, RESISTANCE MEMORY ARRAY AND METHOD OF FORMING THE SAME
- 专利标题（中）： 电阻记忆体，电阻记忆阵列及其形成方法
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申请号： US13615683申请日： 2012-09-14
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公开(公告)号： US20140077149A1公开(公告)日： 2014-03-20
- 发明人: Frederick T. Chen , Heng-Yuan Lee , Yu-Sheng Chen , Wei-Su Chen , Tai-Yuan Wu , Pang-Hsu Chen
- 申请人： Frederick T. Chen , Heng-Yuan Lee , Yu-Sheng Chen , Wei-Su Chen , Tai-Yuan Wu , Pang-Hsu Chen
- 申请人地址： TW Hsinchu
- 专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
A resistance memory cell including a variable resistance layer is provided. The variable resistance layer includes at least one dominant resistance layer and at least one auxiliary resistance layer. The dominant resistance layer(s) and the auxiliary resistance layer(s) in totality form a closed ion exchange system, the exchanged ions are comparably mobile in each of the dominant resistance layer(s) and the auxiliary resistance layer(s), and the maximum resistance of the at least one dominant resistance layer is higher than that of the at least one auxiliary resistance layer.
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