Invention Application
US20140077337A1 High Temperature ALD Process for Metal Oxide for DRAM Applications
有权
金属氧化物用于DRAM应用的高温ALD工艺
- Patent Title: High Temperature ALD Process for Metal Oxide for DRAM Applications
- Patent Title (中): 金属氧化物用于DRAM应用的高温ALD工艺
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Application No.: US13737156Application Date: 2013-01-09
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Publication No.: US20140077337A1Publication Date: 2014-03-20
- Inventor: Hanhong Chen , Edward Haywood , Sandra Malhotra , Hiroyuki Ode
- Applicant: INTERMOLECULAR, INC.
- Applicant Address: US CA San Jose
- Assignee: INTERMOLECULAR, INC.
- Current Assignee: INTERMOLECULAR, INC.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon contamination. The high temperature ALD process can be used for either or both the bottom electrode and the top electrode layers.
Public/Granted literature
- US08829647B2 High temperature ALD process for metal oxide for DRAM applications Public/Granted day:2014-09-09
Information query
IPC分类:
