Invention Application
- Patent Title: ANTIFUSE DEVICE FOR INTEGRATED CIRCUIT
- Patent Title (中): 用于集成电路的防装置
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Application No.: US13654040Application Date: 2012-10-17
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Publication No.: US20140103485A1Publication Date: 2014-04-17
- Inventor: GREGORY M. FRITZ , BAHMAN HEKMATSHOARTABARI , ALI KHAKIFIROOZ , DIRK PFEIFFER , KENNETH P. RODBELL , DAVOOD SHAHRJERDI
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L23/525
- IPC: H01L23/525

Abstract:
The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. Another such antifuse includes a reactive material, at least one metal and a silicon region adjacent to the at least one metal and thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state.
Public/Granted literature
- US08860176B2 Multi-doped silicon antifuse device for integrated circuit Public/Granted day:2014-10-14
Information query
IPC分类: