公开(公告)号：US20150270219A1

公开(公告)日：2015-09-24

申请号：US14733652

申请日：2015-06-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ROBERT L. BRUCE ,  QINGHUANG LIN ,  ALSHAKIM NELSON ,  SATYANARAYANA V. NITTA ,  DIRK PFEIFFER ,  JITENDRA S. RATHORE

IPC: H01L23/528 ,  H01L29/06 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76808 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure includes a patterned and cured dielectric layer located directly on a surface of a patterned permanent antireflective coating. The patterned and cured dielectric layer and the permanent antireflective coating form shaped openings. The shaped openings include an inverse profile which narrows towards a top of the shaped openings. A conductive structure fills the shaped openings wherein the patterned and cured dielectric layer and the permanent antireflective coating each have a conductively filled region.

Abstract translation: 互连结构包括直接位于图案化的永久抗反射涂层的表面上的图案化和固化的电介质层。 图案化和固化的介电层和永久性抗反射涂层形成成形的开口。 成形的开口包括朝向成形开口的顶部变窄的反向轮廓。 导电结构填充成形开口，其中图案化和固化的介电层和永久性抗反射涂层各自具有导电填充区域。

公开(公告)号：US20150219718A1

公开(公告)日：2015-08-06

申请号：US14687561

申请日：2015-04-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： FRANCO MOTIKA ,  DIRK PFEIFFER ,  PEILIN SONG

IPC: G01R31/3177

CPC classification number: G01R31/3177 ,  G01R31/318328 ,  G01R31/318541 ,  G01R31/318547 ,  G06F7/588 ,  G06F21/73

Abstract: Methods and systems for generating a circuit identification number include determining a propagation time delay across a scan chain of known length; comparing the propagation time delay to a threshold associated with the scan chain length; storing an identifier bit based on the result of the comparison; repeating the steps of determining, comparing, and storing until a number of stored identifier bits reaches a threshold number; and outputting the stored identifier bits.

Abstract translation: 用于产生电路识别号码的方法和系统包括确定跨越已知长度的扫描链的传播时间延迟; 将传播时间延迟与扫描链长度相关联的阈值进行比较; 基于比较结果存储标识符位; 重复确定，比较和存储的步骤，直到多个存储的标识符比特达到阈值数; 并输出所存储的标识符位。

公开(公告)号：US20150236693A1

公开(公告)日：2015-08-20

申请号：US14699920

申请日：2015-04-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： DIRK PFEIFFER ,  JEAN-OLIVIER PLOUCHART ,  PEILIN SONG

IPC: H03K19/003

CPC classification number: H03K19/003

Abstract: Methods, systems and devices related to authentication of chips using physical unclonable functions (PUFs) are disclosed. In preferred systems, differentials of PUFs are employed to minimize sensitivity to temperature variations as well as other factors that affect the reliability of PUF states. In particular, a PUF system can include PUF elements arranged in series and in parallel with respect to each other to facilitate the measurement of the differentials and generation of a resulting bit sequence for purposes of authenticating the chip. Other embodiments are directed to determining and filtering reliable and unreliable states that can be employed to authenticate a chip.

Abstract translation: 公开了使用物理不可克隆功能（PUF）的芯片认证相关的方法，系统和设备。 在优选的系统中，使用PUF的差异来最小化对温度变化的敏感性以及影响PUF状态的可靠性的其它因素。 特别地，PUF系统可以包括相对于彼此串联并联布置的PUF元件，以促进对差分的测量并产生所得到的位序列以便认证芯片。 其他实施例涉及确定和过滤可用于认证芯片的可靠和不可靠的状态。

公开(公告)号：US20140103485A1

公开(公告)日：2014-04-17

申请号：US13654040

申请日：2012-10-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： GREGORY M. FRITZ ,  BAHMAN HEKMATSHOARTABARI ,  ALI KHAKIFIROOZ ,  DIRK PFEIFFER ,  KENNETH P. RODBELL ,  DAVOOD SHAHRJERDI

IPC: H01L23/525

CPC classification number: H01L23/5252 ,  H01L23/576 ,  H01L27/24 ,  H01L27/2472 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. Another such antifuse includes a reactive material, at least one metal and a silicon region adjacent to the at least one metal and thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state.

Abstract translation: 本公开涉及用于防止集成电路中的电流流动的反熔丝。 一种这样的反熔丝包括反应性材料和热耦合到反应性材料的硅区域，其中到反应性材料的电流导致反应性材料释放热量，其将硅区域从高电阻状态转变到低电阻状态。 另一种这样的反熔丝包括反应性材料，与至少一种金属相邻并且与反应性材料相邻的至少一个金属和硅区域，其中到反应性材料的电流导致反应性材料释放热量，其转移硅 区域从高电阻状态到低电阻状态。

公开(公告)号：US20150255337A1

公开(公告)日：2015-09-10

申请号：US14717387

申请日：2015-05-20

Applicant: International Business Machines Corporation

Inventor： QINGHUANG LIN ,  DIRK PFEIFFER

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L23/53276 ,  H01L23/5329 ,  H01L28/90 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1683 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device includes an interlevel dielectric layer formed over a substrate and has a first set of openings and a second set of openings formed through the interlevel dielectric layer. The substrate includes conductive areas. A conductive contact structure is formed in the first set of openings in the interlevel dielectric layer to make electrical contact with the conductive areas of the substrate. A functional component is formed in the second set of openings in the interlevel dielectric layer and occupies a same level as the conductive contact structure.

Abstract translation: 电子器件包括形成在衬底上并具有第一组开口的层间电介质层和通过层间介电层形成的第二组开口。 基板包括导电区域。 导电接触结构形成在层间电介质层中的第一组开口中，以与衬底的导电区电接触。 功能部件形成在层间电介质层的第二组开口中，并且与导电接触结构相同。

公开(公告)号：US20140374702A1

公开(公告)日：2014-12-25

申请号：US14480472

申请日：2014-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/775 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

Abstract translation: 形成霍尔效应器件和场效应晶体管，其中结合有诸如碳纳米管和/或石墨烯的碳基纳米结构层与其上形成的牺牲金属层，以在加工期间保护碳基纳米结构层。

公开(公告)号：US20140225193A1

公开(公告)日：2014-08-14

申请号：US13654416

申请日：2012-10-18

Applicant: International Business Machines Corporation

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20170186881A1

公开(公告)日：2017-06-29

申请号：US15237350

申请日：2016-08-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/786 ,  H01L29/16 ,  H01L21/04 ,  H01L21/3213 ,  H01L43/14 ,  H01L29/45 ,  H01L29/66 ,  H01L51/05 ,  H01L43/06 ,  H01L51/00 ,  H01L29/08

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20150336800A1

公开(公告)日：2015-11-26

申请号：US14816887

申请日：2015-08-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  CHRISTOS D. DIMITRAKOPOULOS ,  KEITH E. FOGEL ,  JAMES B. HANNON ,  JEEHWAN KIM ,  HONGSIK PARK ,  DIRK PFEIFFER ,  DEVENDRA K. SADANA

IPC: C01B31/04 ,  H01L21/683 ,  H01L29/16 ,  H01L21/02

CPC classification number: C01B31/0446 ,  C01B32/184 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/0272 ,  H01L21/2007 ,  H01L21/6835 ,  H01L29/1606 ,  H01L2221/68345 ,  H01L2221/68368 ,  H01L2221/68381 ,  Y10T156/11 ,  Y10T156/1153

Abstract: A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.

Abstract translation: 二维材料的转印方法包括在基板上形成二维材料的扩散层，扩散层具有单层。 在扩散层上形成应力层，并且应力层被配置为向扩散层的最接近的单层施加应力。 最接近的单层通过机械分裂扩散层而剥离，其中最紧密的单层保留在应力层上。