公开(公告)号：US20180069141A1

公开(公告)日：2018-03-08

申请号：US15812673

申请日：2017-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0465 ,  H01L31/20 ,  H01L31/046 ,  H01L31/18 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/076 ,  H01L31/0224 ,  H01L31/077 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/0463 ,  H01L31/068

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US20150270424A1

公开(公告)日：2015-09-24

申请号：US14730502

申请日：2015-06-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/0352 ,  H01L31/0747

CPC classification number: H01L31/0747 ,  B82Y20/00 ,  H01L31/022441 ,  H01L31/035236 ,  H01L31/035254 ,  H01L31/0516 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

Abstract translation: 光电器件和方法包括耦合到衬底的第一侧上的发射极侧结构的衬底和与衬底的第一侧相对的一侧的背侧结构。 发射极侧结构或背面结构包括在宽带隙层和窄带隙层之间交替的层，以提供与衬底有效增加的带偏移和/或在单个材料接触上有效地更高的掺杂水平的多层接触。 发射极触点耦合到器件的光收集端部上的发射极侧结构。 背面接触件与与光收集端部相对的背面结构耦合。

公开(公告)号：US20180258549A1

公开(公告)日：2018-09-13

申请号：US15976224

申请日：2018-05-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: C30B25/04 ,  H01L21/02 ,  H01L21/3065 ,  C30B25/18 ,  C30B29/06 ,  C30B25/14 ,  C30B25/10 ,  C30B33/12

CPC classification number: C30B25/04 ,  C30B25/105 ,  C30B25/14 ,  C30B25/183 ,  C30B25/186 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065

Abstract: An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

公开(公告)号：US20180212094A1

公开(公告)日：2018-07-26

申请号：US15927243

申请日：2018-03-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/20 ,  H01L31/0747 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/202 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  Y02E10/50

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

公开(公告)号：US20150318416A1

公开(公告)日：2015-11-05

申请号：US14798248

申请日：2015-07-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOARTABARI ,  ALI KHAKIFIROOZ ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0236 ,  H01L31/0352 ,  H01L31/0725

CPC classification number: H01L31/02363 ,  H01L31/03529 ,  H01L31/0725 ,  Y02E10/50

Abstract: A method for forming a multi-junction photovoltaic device includes providing a germanium layer and etching pyramidal shapes in the germanium layer such that (111) facets are exposed to form a textured surface. A first p-n junction is formed on or over the textured surface from III-V semiconductor materials. Another p-n junction is formed over the first p-n junction from III-V semiconductor materials and follows the textured surface.

Abstract translation: 一种用于形成多结光伏器件的方法包括提供锗层并在锗层中蚀刻金字塔形，使得（111）面被暴露以形成纹理表面。 在III-V半导体材料的纹理表面上或上方形成第一p-n结。 在III-V半导体材料的第一个p-n结上形成另一个p-n结，并跟随纹理表面。

公开(公告)号：US20150255541A1

公开(公告)日：2015-09-10

申请号：US14720393

申请日：2015-05-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： WILFRIED E. HAENSCH ,  BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  TAK H. NING ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L29/08 ,  H01L29/78

CPC classification number: H01L29/66477 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/2257 ,  H01L21/265 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7841 ,  H01L29/78618 ,  H01L29/78621

Abstract: A back end of line device and method for fabricating a transistor device include a substrate having an insulating layer formed thereon and a channel layer formed on the insulating layer. A gate structure is formed on the channel layer. Dopants are implanted into an upper portion of the channel layer on opposite sides of the gate structure to form shallow source and drain regions using a low temperature implantation process. An epitaxial layer is selectively grown on the shallow source and drain regions to form raised regions above the channel layer and against the gate structure using a low temperature plasma enhanced chemical vapor deposition process, wherein low temperature is less than about 400 degrees Celsius.

Abstract translation: 用于制造晶体管器件的线路器件的后端和方法包括其上形成有绝缘层的衬底和形成在绝缘层上的沟道层。 栅极结构形成在沟道层上。 在栅极结构的相对侧将掺杂剂注入沟道层的上部，以使用低温注入工艺形成浅的源极和漏极区。 在浅源极和漏极区上选择性地生长外延层，以使用低温等离子体增强化学气相沉积工艺在通道层上方和栅极结构上形成凸起区域，其中低温小于约400摄氏度。

公开(公告)号：US20140191237A1

公开(公告)日：2014-07-10

申请号：US13967128

申请日：2013-08-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOARTABARI ,  NING LI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L29/786

CPC classification number: H01L29/66742 ,  H01L29/66772 ,  H01L29/786 ,  H01L29/78654 ,  H01L29/78675 ,  H01L33/0041

Abstract: A method for forming a thin film transistor includes joining a crystalline substrate to an insulating substrate. A doped layer is deposited on the crystalline substrate, and the doped layer is patterned to form source and drain regions. The crystalline substrate is patterned to form an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions. A gate stack is formed between the source and drain regions, and contacts are formed to the source and drain regions and the gate stack through a passivation layer.

Abstract translation: 一种形成薄膜晶体管的方法，包括将晶体衬底接合到绝缘衬底上。 掺杂层沉积在晶体衬底上，并且掺杂层被图案化以形成源区和漏区。 将晶体衬底图案化以形成有源区，使得在源区和漏区之间的晶体衬底中形成导电沟道。 在源极和漏极区域之间形成栅极堆叠，并且通过钝化层将触点形成到源极和漏极区域以及栅极堆叠。

公开(公告)号：US20140087513A1

公开(公告)日：2014-03-27

申请号：US13657140

申请日：2012-10-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/0376 ,  H01L31/0368 ,  H01L31/02

CPC classification number: H01L31/022458 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.

公开(公告)号：US20170081781A1

公开(公告)日：2017-03-23

申请号：US15371366

申请日：2016-12-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: C30B25/04 ,  C30B25/14 ,  H01L21/3065 ,  C30B33/12 ,  H01L21/02 ,  C30B25/18 ,  C30B29/06

CPC classification number: C30B25/04 ,  C30B25/105 ,  C30B25/14 ,  C30B25/183 ,  C30B25/186 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065

Abstract: An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

公开(公告)号：US20160087577A1

公开(公告)日：2016-03-24

申请号：US14495559

申请日：2014-09-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY

Inventor： ABDULRAHMAN ALBADRI ,  STEPHEN BEDELL ,  NING LI ,  DEVENDRA SADANA ,  KATHERINE L. SAENGER ,  ABDELMAJID SALHI ,  DAVOOD SHAHRJERDI

IPC: H01L31/042 ,  H01L31/0232 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L31/035281 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a p-type semiconductor substrate including a plurality of thin absorption regions and a plurality of thick absorption regions. The plurality of thin absorption regions and the plurality of thick absorption regions are coplanar on a bottom side thereof. An n-type semiconductor layer is disposed over a top side of the p-type semiconductor substrate. The n-type semiconductor layer has a substantially uniform thickness. Metallurgy is disposed on top of the n-type semiconductor layer. The plurality of thin absorption regions are sufficiently thin to render the semiconductor substrate flexible.

Abstract translation: 太阳能电池包括包括多个薄吸收区域和多个厚吸收区域的p型半导体衬底。 多个薄吸收区域和多个厚吸收区域在其底侧共面。 n型半导体层设置在p型半导体衬底的顶侧上。 n型半导体层的厚度基本均匀。 冶金设置在n型半导体层的顶部。 多个薄吸收区域足够薄以使半导体衬底柔性。