Invention Application
- Patent Title: BARRIER LAYER ON BUMP AND NON-WETTABLE COATING ON TRACE
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Application No.: US13771524Application Date: 2013-02-20
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Publication No.: US20140131857A1Publication Date: 2014-05-15
- Inventor: Omar J. Bchir , Milind P. Shah , Houssam W. Jomaa , Manuel Aldrete , Chin-Kwan Kim
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H01L23/498
- IPC: H01L23/498
Abstract:
Some implementations provide a semiconductor device that includes a die, an under bump metallization (UBM) structure coupled to the die, and a barrier layer. The UBM structure has a first oxide property. The barrier layer has a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure. The barrier layer includes a top portion, a bottom portion and a side portion. The top portion is coupled to the UBM structure, and the side portion is substantially oxidized.
Public/Granted literature
- US08802556B2 Barrier layer on bump and non-wettable coating on trace Public/Granted day:2014-08-12
Information query
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