发明申请
US20140145214A1 SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME, AND DEVICE FOR PRODUCING SIC EPITAXIAL WAFER
审中-公开
SIC外延波形及其制造方法，以及用于生产SIC外延波形的装置
- 专利标题： SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME, AND DEVICE FOR PRODUCING SIC EPITAXIAL WAFER
- 专利标题（中）： SIC外延波形及其制造方法，以及用于生产SIC外延波形的装置
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申请号： US14233289申请日： 2012-07-12
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公开(公告)号： US20140145214A1公开(公告)日： 2014-05-29
- 发明人: Yoshiaki Kageshima , Daisuke Muto , Kenji Momose , Yoshihiko Miyasaka
- 申请人： Yoshiaki Kageshima , Daisuke Muto , Kenji Momose , Yoshihiko Miyasaka
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： SHOWA DENKO K.K.
- 当前专利权人： SHOWA DENKO K.K.
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2011-157918 20110719
- 国际申请： PCT/JP2012/067841 WO 20120712
- 主分类号： C30B25/16
- IPC分类号： C30B25/16 ; H01L29/16 ; C30B25/12 ; H01L29/34
摘要：
A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.
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