发明申请
- 专利标题: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
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申请号: US14233147申请日: 2011-07-15
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公开(公告)号: US20140162413A1公开(公告)日: 2014-06-12
- 发明人: Hiroki Wakimoto , Masaaki Ogino
- 申请人: Hiroki Wakimoto , Masaaki Ogino
- 申请人地址: JP Kawasaki-shi
- 专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人地址: JP Kawasaki-shi
- 国际申请: PCT/JP2011/066262 WO 20110715
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
A method includes forming on a first main surface of a semiconductor wafer of a first conduction type, a gate electrode of a semiconductor element, an edge termination region for forming a breakdown voltage of the semiconductor element, and a first semiconductor region of a second conduction type which surrounds the semiconductor element and the edge termination region. A groove may be formed to reach the first semiconductor region from a second main surface of the semiconductor wafer. The groove is formed so that a portion of the semiconductor wafer, that forms an outer circumferential end of the semiconductor wafer, remains and the groove is further towards a center of the semiconductor wafer than the outer circumferential end. A third semiconductor region of the second conduction type is on a side wall of the groove and electrically connects the first semiconductor region and a second semiconductor region.
公开/授权文献
- US09240456B2 Method for manufacturing semiconductor device 公开/授权日:2016-01-19