公开(公告)号：US08399309B2

公开(公告)日：2013-03-19

申请号：US13109660

申请日：2011-05-17

申请人： Masaaki Ogino ,  Hiroki Wakimoto ,  Masayuki Miyazaki

发明人： Masaaki Ogino ,  Hiroki Wakimoto ,  Masayuki Miyazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/66333 ,  H01L29/045 ,  H01L29/0657

摘要： A manufacturing method is disclosed which ensures strength of a wafer and improves device performance. A thermal diffusion layer is formed from a front surface of a wafer. A tapered groove which reaches the thermal diffusion layer is formed from a back surface by anisotropic etching with alkaline solution. In-groove thermal diffusion layer is formed on side wall surfaces of the groove. A separation layer of a reverse blocking IGBT is configured of the thermal diffusion layer and the in-groove diffusion layer. The thermal diffusion layer is formed shallowly by forming the in-groove diffusion layer. It is possible to considerably reduce thermal diffusion time. By carrying out an ion implantation forming the in-groove diffusion layer and an ion implantation forming a collector layer separately, it is possible to select an optimum value for tradeoff between turn-on voltage and switching loss, while ensuring reverse blocking voltage of the reverse blocking IGBT.

摘要翻译： 公开了一种确保晶片强度并提高器件性能的制造方法。 热扩散层由晶片的前表面形成。 通过各向异性蚀刻用碱性溶液从后表面形成到达热扩散层的锥形槽。 槽内热扩散层形成在槽的侧壁面上。 反向阻断IGBT的分离层由热扩散层和内槽扩散层构成。 通过形成内槽扩散层来形成浅扩散层。 可以显着地减少热扩散时间。 通过进行形成槽内扩散层的离子注入和分离形成集电极的离子注入，可以选择用于折合导通电压和开关损耗之间的最优值，同时确保反向的反向阻断电压 阻断IGBT。

公开(公告)号：US20110281406A1

公开(公告)日：2011-11-17

申请号：US13109660

申请日：2011-05-17

申请人： Masaaki OGINO ,  Hiroki WAKIMOTO ,  Masayuki MIYAZAKI

发明人： Masaaki OGINO ,  Hiroki WAKIMOTO ,  Masayuki MIYAZAKI

IPC分类号： H01L21/331

CPC分类号： H01L29/66333 ,  H01L29/045 ,  H01L29/0657

摘要： A manufacturing method is disclosed which ensures strength of a wafer and improves device performance. A thermal diffusion layer is formed from a front surface of a wafer. A tapered groove which reaches the thermal diffusion layer is formed from a back surface by anisotropic etching with alkaline solution. In-groove thermal diffusion layer is formed on side wall surfaces of the groove. A separation layer of a reverse blocking IGBT is configured of the thermal diffusion layer and the in-groove diffusion layer. The thermal diffusion layer is formed shallowly by forming the in-groove diffusion layer. It is possible to considerably reduce thermal diffusion time. By carrying out an ion implantation forming the in-groove diffusion layer and an ion implantation forming a collector layer separately, it is possible to select an optimum value for tradeoff between turn-on voltage and switching loss, while ensuring reverse blocking voltage of the reverse blocking IGBT.

摘要翻译： 公开了一种确保晶片强度并提高器件性能的制造方法。 热扩散层由晶片的前表面形成。 通过各向异性蚀刻用碱性溶液从后表面形成到达热扩散层的锥形槽。 槽内热扩散层形成在槽的侧壁面上。 反向阻断IGBT的分离层由热扩散层和内槽扩散层构成。 通过形成内槽扩散层来形成浅扩散层。 可以显着地减少热扩散时间。 通过进行形成槽内扩散层的离子注入和分离形成集电极的离子注入，可以选择用于折合导通电压和开关损耗之间的最优值，同时确保反向的反向阻断电压 阻断IGBT。

公开(公告)号：US20110215435A1

公开(公告)日：2011-09-08

申请号：US13038349

申请日：2011-03-01

申请人： Hiroki WAKIMOTO ,  Kenichi Iguchi ,  Koh Yoshikawa ,  Tsunehiro Nakajima ,  Shunsuke Tanaka ,  Masaaki Ogino

发明人： Hiroki WAKIMOTO ,  Kenichi Iguchi ,  Koh Yoshikawa ,  Tsunehiro Nakajima ,  Shunsuke Tanaka ,  Masaaki Ogino

IPC分类号： H01L29/06 ,  H01L21/78 ,  H01L21/302

CPC分类号： H01L21/308 ,  H01L21/302 ,  H01L21/78 ,  H01L29/06

摘要： Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.

摘要翻译： 本发明的一些实施例涉及能够防止电特性劣化的半导体器件和半导体器件的制造方法。 p型集电极区域设置在n型漂移区域的背面的表面层上。 在元件的末端提供了用于获得反向阻挡能力的p +型隔离层。 此外，设置从n型漂移区的背面向p +型隔离层延伸的凹部。 提供p型区域并且电连接到p +型隔离层。 提供p +型隔离层，以便包括具有作为一侧的凹部的底部和侧壁之间的边界的解理面。

公开(公告)号：US5501908A

公开(公告)日：1996-03-26

申请号：US206835

申请日：1994-03-07

申请人： Tsutomu Shioyama ,  Naoki Hamano ,  Masaaki Ogino

发明人： Tsutomu Shioyama ,  Naoki Hamano ,  Masaaki Ogino

IPC分类号： C08K7/02 ,  C08L21/00 ,  C08L23/34 ,  C08L77/00 ,  F16G5/20 ,  F16G1/08 ,  F16G1/04 ,  F16G5/06 ,  B32B25/02

CPC分类号： F16G5/20 ,  C08L11/00 ,  C08L21/00 ,  C08L23/34 ,  C08L9/02 ,  C08K7/02 ,  C08L2205/16 ,  C08L2312/00 ,  C08L77/00 ,  Y10T428/249933 ,  Y10T428/2915 ,  Y10T428/2969

摘要： A rubber composition containing a rubber forming a continuous phase of 100 weight parts; a nylon fiber with fine diameter of 1-15 weight parts by the fiber, the nylon fiber being grafted with a molecular of a rubber capable of co-crosslinking to the rubber forming the continuous phase; and a short fiber of 1-30 weight parts is used to at least a part of a rubber of a transmission belt. Thus, high anisotropy in modulus of elasticity in the transmission belt is maintained. Further, stress concentration at an interface of the short fiber and the rubber is distributed to enhance the strength, elasticity and flex fatigue resistance.

摘要翻译： 一种含有形成100重量份连续相的橡胶的橡胶组合物; 纤维的纤维直径为1-15重量份的尼龙纤维，尼龙纤维与能够与形成连续相的橡胶共交联的橡胶分子接枝; 并且使用1-30重量份的短纤维作为传动带的橡胶的至少一部分。 因此，保持传动带中弹性模量的高各向异性。 此外，短纤维和橡胶的界面处的应力集中分布，以提高强度，弹性和抗挠曲疲劳性。

公开(公告)号：US4926902A

公开(公告)日：1990-05-22

申请号：US298104

申请日：1989-01-17

申请人： Hisashi Nakamura ,  Satoshi Takahashi ,  Takayuki Ikeda ,  Masaaki Ogino

发明人： Hisashi Nakamura ,  Satoshi Takahashi ,  Takayuki Ikeda ,  Masaaki Ogino

IPC分类号： F02M59/46

CPC分类号： F02M59/462 ,  Y10T137/7774 ,  Y10T137/7777 ,  Y10T137/778

摘要： A pressure equalizer valve device incorporated in a fuel delivery valve assembly for use in a fuel injection pump, the fuel delivery valve assembly having a valve chamber and a delivery valve member axially movable in part within the valve chamber, the pressure equalizer valve device including a hollow equalizer valve casing member secured to the delivery valve member and having a valve seat surface portion, an equalizer valve element movable into and out of a position seated on the valve seat surface portion, a spring seat member engaging the equalizer valve element, and a helical compression spring seated at one end on the spring seat member and at the other within the delivery valve member, wherein the equalizer valve element, the spring seat member and the spring are all accommodated within the equalizer valve casing member.

公开(公告)号：US10115587B2

公开(公告)日：2018-10-30

申请号：US13879371

申请日：2012-02-23

申请人： Haruo Nakazawa ,  Masaaki Ogino ,  Hidenao Kuribayashi ,  Hideaki Teranishi

发明人： Haruo Nakazawa ,  Masaaki Ogino ,  Hidenao Kuribayashi ,  Hideaki Teranishi

IPC分类号： H01L21/02 ,  C30B29/06 ,  C30B33/02 ,  H01L29/66 ,  H01L21/228

摘要： A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.

公开(公告)号：US08999768B2

公开(公告)日：2015-04-07

申请号：US14005256

申请日：2011-09-13

申请人： Haruo Nakazawa ,  Masaaki Ogino ,  Tsunehiro Nakajima

发明人： Haruo Nakazawa ,  Masaaki Ogino ,  Tsunehiro Nakajima

IPC分类号： H01L21/332 ,  H01L29/739 ,  H01L21/683 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/47 ,  H01L29/08 ,  H01L29/20

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L21/0495 ,  H01L21/6835 ,  H01L21/78 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7396 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68381

摘要： A semiconductor device and its method of manufacture. In the method, a front surface element structure is formed on a front surface of a semiconductor wafer, for example an SiC wafer. Then, a supporting substrate is bonded to wafer's front surface through an adhesive. The wafer's rear surface is ground and polished to thin it, with the supporting substrate bonded to the wafer. Next a V groove passing through the SiC wafer and reaching the adhesive is formed in the wafer's rear surface, and the wafer is cut into individual chips. An electrode film is formed on the groove's side wall and the chip's rear surface and a Schottky junction is formed between a drift layer, which is the chip, and the film. Then, the film is annealed. A tape is attached to the wafer's rear surface which has been cut into the chips. Then, the supporting substrate peels off from the wafer.

摘要翻译： 一种半导体器件及其制造方法。 在该方法中，在半导体晶片（例如SiC晶片）的前表面上形成前表面元件结构。 然后，通过粘合剂将支撑基板粘合到晶片的前表面。 将晶片的后表面研磨并抛光，使其支撑基板粘结到晶片上。 接下来，在晶片的后表面形成通过SiC晶片并到达粘合剂的V沟槽，将晶片切割成单独的芯片。 在槽的侧壁和芯片的后表面上形成电极膜，在作为芯片的漂移层与膜之间形成肖特基结。 然后，将膜退火。 带子被连接到已经切入芯片的晶片的后表面上。 然后，支撑基板从晶片剥离。

公开(公告)号：US08501549B2

公开(公告)日：2013-08-06

申请号：US13537549

申请日：2012-06-29

申请人： Masaaki Ogino

发明人： Masaaki Ogino

IPC分类号： H01L21/332

CPC分类号： H01L29/7395 ,  H01L21/76237 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/66333

摘要： A method of manufacturing a reverse blocking insulated gate bipolar transistor to form an isolation layer for bending and extending a pn junction, which exhibits a high reverse withstand voltage, to the front surface side. This ensures a high withstand voltage in the reversed direction and reduces leakage current in the reversely biased condition. Formation of a tapered groove by an anisotropic alkali etching process is conducted, resulting in a semiconductor substrate left with a thickness of at least 60 μm between one principal surface and the bottom surface of the tapered groove formed from the other principal surface.

摘要翻译： 制造反向阻挡绝缘栅双极晶体管的方法，以形成用于将表现出高反向耐受电压的pn结弯曲和延伸到前表面侧的隔离层。 这确保了相反方向的高耐受电压，并且在相反的偏置状态下减少漏电流。 通过各向异性碱蚀刻工艺形成锥形槽，导致在另一个主表面形成的锥形槽的一个主表面和底表面之间留下厚度至少为60微米的半导体衬底。

公开(公告)号：US6056656A

公开(公告)日：2000-05-02

申请号：US33849

申请日：1998-03-03

申请人： Yoshiyuki Kitano ,  Masaaki Ogino

发明人： Yoshiyuki Kitano ,  Masaaki Ogino

IPC分类号： F16G5/20 ,  F16G1/04

CPC分类号： F16G5/20

摘要： A V-ribbed belt A is made up of a compression rubber 3, an adhesion rubber 1 laminated to the upper surface of the compression rubber 3, and a plurality of tension members 2 fixed by rubber of the adhesion rubber 1 to be held in place in the adhesion rubber 1 and arranged in the direction of the length of the belt. The upper surface of the adhesion rubber 1 is covered with a covering fabric-rubber composite B. All the rubber sections of the composite B are composed of a rubber compound formed by incorporating 5 to 15 phr of an adhesive prepared by mixing resorcinol or denatured resorcinol with a methylene donor, into H-NBR. The adhesion rubber 1 and the compression rubber 3 are composed of a rubber compound whose principal components are ACSM and carbon for achieving good belt back-face drive in high-temperature environment.

摘要翻译： V形肋带A由压缩橡胶3，层压到压缩橡胶3的上表面的粘合橡胶1和由粘合橡胶1的橡胶固定的多个张力构件2构成，以保持在适当位置 在粘合橡胶1中并且沿着带的长度方向布置。 粘合橡胶1的上表面覆盖有覆盖织物 - 橡胶复合材料B.复合材料B的所有橡胶部分由通过掺入5至15phr通过混合间苯二酚或变性间苯二酚制备的粘合剂形成的橡胶化合物 与亚甲基供体进入H-NBR。 粘合橡胶1和压缩橡胶3由主要成分为ACSM的橡胶组合物和用于在高温环境中实现良好的带背面驱动的碳的碳组成。

公开(公告)号：US5417619A

公开(公告)日：1995-05-23

申请号：US238691

申请日：1994-05-05

申请人： Yoshitaka Tajima ,  Masaaki Ogino ,  Yuji Takahara ,  Shizuaki Tsuruta ,  Kanji Kimoto ,  Kazuyoshi Tani

发明人： Yoshitaka Tajima ,  Masaaki Ogino ,  Yuji Takahara ,  Shizuaki Tsuruta ,  Kanji Kimoto ,  Kazuyoshi Tani

IPC分类号： F16G5/08 ,  F16G1/28 ,  F16G5/06 ,  F16G5/20 ,  F16G1/00

CPC分类号： F16G5/20 ,  F16G1/28

摘要： A canvas-rubber complex provided on an upper face of a tension rubber on a back side of V-ribbed belt is composed of a covering canvas, impregnation rubber with which the covering canvas is impregnated, an outer rubber layer which is applied to a first face of the covering canvas which is located on the back face's side of the belt, an inner rubber layer which is applied to a second face of the covering canvas which is the back of the first face, and an adhesion rubber layer disposed on a side of the inner rubber layer for adhering the canvas-rubber complex to the upper face of the tension rubber. Among the rubber elements excepting the adhesion rubber layer, at least the outer rubber layer is formed of a rubber composition including as main ingredients thereof CR polymer, hard carbon and conductive carbon.

摘要翻译： 设置在V形肋带背面的张力橡胶的上表面上的帆布橡胶复合体由覆盖帆布，被浸渍的覆盖帆布的浸渍橡胶，涂覆在第一层上的外层橡胶层 位于带的背面侧的覆盖帆布的表面，施加到作为第一面的背面的覆盖帆布的第二面的内部橡胶层，以及设置在第一面的背面的粘合橡胶层 的内部橡胶层，用于将帆布橡胶复合体粘附到张力橡胶的上表面。 在除了粘合橡胶层之外的橡胶元件中，至少外部橡胶层由包含作为其主要成分的CR聚合物，硬碳和导电性碳的橡胶组合物形成。