发明申请
- 专利标题： FINFET WITH MERGE-FREE FINS
- 专利标题（中）： FINFET具有无缝FINS
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申请号： US13713842申请日： 2012-12-13
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公开(公告)号： US20140167162A1公开(公告)日： 2014-06-19
- 发明人: Hong He , Chiahsun Tseng , Junli Wang , Chun-chen Yeh , Yunpeg Yin
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78
摘要：
A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.
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