公开(公告)号：US20140167162A1

公开(公告)日：2014-06-19

申请号：US13713842

申请日：2012-12-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Hong He ,  Chiahsun Tseng ,  Junli Wang ,  Chun-chen Yeh ,  Yunpeg Yin

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78696

Abstract: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.

Abstract translation: 半导体器件包括绝缘层，形成在绝缘层的上表面上的有源半导体层和形成在绝缘层上的多个鳍。 翅片形成在第一源极/漏极区域和第二源极/漏极区域之间的栅极和间隔区域中，而不延伸到第一和第二源极/漏极区域中。

公开(公告)号：US20140170825A1

公开(公告)日：2014-06-19

申请号：US13965322

申请日：2013-08-13

Applicant: International Business Machines Corporation

Inventor： Hong He ,  Chiahsun Tseng ,  Junli Wang ,  Chun-chen Yeh ,  Yunpeg Yin

IPC: H01L29/66

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78696

Abstract: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.