发明申请
- 专利标题: SELF-FORMED NANOMETER CHANNEL AT WAFER SCALE
- 专利标题(中): 自制规模的自制纳米通道
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申请号: US13738298申请日: 2013-01-10
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公开(公告)号: US20140190932A1公开(公告)日: 2014-07-10
- 发明人: Ali Afzali-Ardakani , Binquan Luan , Gustavo A. Stolovitzky , Chao Wang , Deqiang Wang
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01B13/06
- IPC分类号: H01B13/06
摘要:
A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.
公开/授权文献
- US08945404B2 Self-formed nanometer channel at wafer scale 公开/授权日:2015-02-03
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