Invention Application
US20140199839A1 FILM-FORMING METHOD FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM OR TUNGSTEN OXIDE FILM
审中-公开
电镀膜或氧化钨膜上形成硅氧烷膜的成膜方法
- Patent Title: FILM-FORMING METHOD FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM OR TUNGSTEN OXIDE FILM
- Patent Title (中): 电镀膜或氧化钨膜上形成硅氧烷膜的成膜方法
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Application No.: US14190416Application Date: 2014-02-26
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Publication No.: US20140199839A1Publication Date: 2014-07-17
- Inventor: Jun SATO , Pao-Hwa Chou
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2010-290565 20101227
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.
Information query
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