公开(公告)号：US20150332917A1

公开(公告)日：2015-11-19

申请号：US14796295

申请日：2015-07-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun SATO ,  Pao-Hwa Chou

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/02164 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28568

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.

Abstract translation: 成膜方法包括在被处理物上形成钨膜或氧化钨膜，对其上形成有钨膜或氧化钨膜的物体进行加热，在钨膜或氧化钨上形成晶种层 通过向钨膜或氧化钨膜的表面供给氨基硅烷类气体，通过同时供给包含硅的硅材料气体和包含氧化硅的氧化剂的气体，在种子层上形成氧化硅膜 。

公开(公告)号：US20140199839A1

公开(公告)日：2014-07-17

申请号：US14190416

申请日：2014-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun SATO ,  Pao-Hwa Chou

IPC: H01L21/02

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02299 ,  H01L21/02312

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.

Abstract translation: 成膜方法包括在被处理物上形成钨膜或氧化钨膜，对其上形成有钨膜或氧化钨膜的物体进行加热，在钨膜或氧化钨上形成晶种层 通过向钨膜或氧化钨膜的表面供给氨基硅烷类气体，通过同时供给包含硅的硅材料气体和包含氧化硅的氧化剂的气体，在种子层上形成氧化硅膜 。

公开(公告)号：US09460913B2

公开(公告)日：2016-10-04

申请号：US14796295

申请日：2015-07-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun Sato ,  Pao-Hwa Chou

IPC: C23C16/00 ,  H01L21/02 ,  H01L21/285 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02164 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28568

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.

Abstract translation: 成膜方法包括在被处理物上形成钨膜或氧化钨膜，对其上形成有钨膜或氧化钨膜的物体进行加热，在钨膜或氧化钨上形成晶种层 通过向钨膜或氧化钨膜的表面供给氨基硅烷类气体，通过同时供给包含硅的硅材料气体和包含氧化硅的氧化剂的气体，在种子层上形成氧化硅膜 。

公开(公告)号：US09466476B2

公开(公告)日：2016-10-11

申请号：US14560232

申请日：2014-12-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun Sato ,  Pao-Hwa Chou

IPC: C23C16/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02164 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/28061 ,  H01L21/28247

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.

Abstract translation: 成膜方法包括在被处理物上形成钨膜或氧化钨膜，在钨膜或氧化钨膜上形成种子层，在种子层上形成氧化硅膜，其中种子 通过加热被处理物并将氨基硅烷系气体供给到钨膜或氧化钨膜的表面，形成在钨膜或氧化钨膜上形成的层。

公开(公告)号：US20150087161A1

公开(公告)日：2015-03-26

申请号：US14560232

申请日：2014-12-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun SATO ,  Pao-Hwa Chou

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/28061 ,  H01L21/28247

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.

Abstract translation: 成膜方法包括在被处理物上形成钨膜或氧化钨膜，在钨膜或氧化钨膜上形成种子层，在种子层上形成氧化硅膜，其中种子 通过加热被处理物并将氨基硅烷系气体供给到钨膜或氧化钨膜的表面，形成在钨膜或氧化钨膜上形成的层。