公开(公告)号：US20240006163A1

公开(公告)日：2024-01-04

申请号：US18199623

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Takeshi KOBAYASHI ,  Jun SATO ,  Takashi CHIBA

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/32917 ,  H01J37/3211 ,  H01J37/32715

Abstract: A monitoring method includes steps of (a) placing a substrate on a mounting stage of a processing chamber of a plasma processing apparatus; (b) supplying a pulsed wave of RF power with a predetermined duty ratio from an RF power supply connected to an antenna; and (c) monitoring a plasma state based on a converted value of a Vpp voltage of an output terminal of a matching unit arranged between the antenna and the RF power supply. The converted value of the Vpp voltage is obtained by converting the Vpp voltage of the output terminal voltage based on the duty ratio, the RF power, and correlation information indicating a correlation between the Vpp voltage and the RF power.

公开(公告)号：US20210028356A1

公开(公告)日：2021-01-28

申请号：US17040483

申请日：2019-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ken ANDO ,  Hiroki MAEHARA ,  Jun SATO ,  Kiyoshi MAEDA ,  Shigeru TAHARA

IPC: H01L43/12 ,  H01L43/08

Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

公开(公告)号：US20170218510A1

公开(公告)日：2017-08-03

申请号：US15420333

申请日：2017-01-31

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Masahiro MURATA ,  Jun SATO ,  Shigehiro MIURA

IPC: C23C16/24 ,  C23C16/50

Abstract: A film deposition method for filling a recessed pattern with a SiN film is provided. NH2 groups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NH3 converted to first plasma to the surface of the substrate containing the recessed pattern. The NH2 groups is partially converted to N groups by supplying a second process gas containing N2 converted to second plasma to the surface of the substrate containing the recessed pattern on which the NH2 groups is adsorbed. A silicon-containing gas is caused to adsorb on the NH2 groups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NH2 groups and the N groups are adsorbed. The above steps are cyclically repeated.

公开(公告)号：US20170133233A1

公开(公告)日：2017-05-11

申请号：US15319101

申请日：2015-07-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun SATO ,  Eiichi NISHIMURA

IPC: H01L21/3065 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L21/3065 ,  H01L27/105 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: In a method according to one embodiment, a first processing gas is supplied into a processing container of a plasma processing apparatus, and a plasma of the first processing gas is generated to etch an upper magnetic layer by the plasma of the first processing gas. Subsequently, a deposit, which is generated due to the etching of the upper magnetic layer, is removed. The removal of the deposit includes allowing a reduction reaction to occur in the deposit by a plasma of a second processing gas that contains H2 gas, and removing a product, which is generated by the reduction reaction, by using a third processing gas that contains hexafluoroacetylacetone.

公开(公告)号：US20160268105A1

公开(公告)日：2016-09-15

申请号：US15165064

申请日：2016-05-26

Applicant: Tokyo Electron Limited

Inventor： Shigehiro MIURA ,  Hitoshi KATO ,  Jun SATO ,  Takeshi KOBAYASHI ,  Masato YONEZAWA

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01J37/32532 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334

Abstract: An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.

公开(公告)号：US20160254136A1

公开(公告)日：2016-09-01

申请号：US15049345

申请日：2016-02-22

Applicant: Tokyo Electron Limited

Inventor： Jun SATO ,  Shigehiro MIURA

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/45534 ,  C23C16/45551 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L29/66181

Abstract: A method of depositing a silicon-containing film using a film deposition apparatus is provided. The apparatus includes a turntable provided in a process chamber. In the method, a seed layer is formed on a surface of the substrate by supplying an aminosilane gas from the first process gas supplying unit for a predetermined period of time while rotating the turntable. A boron-containing gas is supplied from the first gas supplying unit to the surface of the substrate while rotating the turntable after finishing the step of forming the seed layer on the surface of the substrate. A silane-based gas is supplied from the second process gas supplying unit to the surface of the substrate while rotating the turntable and causing silicon atoms contained in the silane-based gas to bond with each other on the surface of the substrate by a catalytic action of the boron-containing gas.

Abstract translation: 提供了使用成膜装置沉积含硅膜的方法。 该设备包括设置在处理室中的转台。 在该方法中，通过在旋转转台的同时从第一处理气体供给单元供给氨基硅烷气体一定时间，在基板的表面上形成种子层。 在完成在基板的表面上形成种子层的步骤之后，使旋转台转动，从第一气体供给单元向基板的表面供给含硼气体。 在旋转转盘并使硅烷系气体中所含的硅原子通过催化作用在基板的表面上彼此接合，将硅烷类气体从第二处理气体供给单元供给到基板的表面 的含硼气体。

公开(公告)号：US20150332895A1

公开(公告)日：2015-11-19

申请号：US14709656

申请日：2015-05-12

Applicant: Tokyo Electron Limited

Inventor： Shigehiro MIURA ,  Hitoshi KATO ,  Jun SATO ,  Toshiyuki NAKATSUBO ,  Hiroyuki KIKUCHI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32449 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/507 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/68764

Abstract: A plasma processing method is provided. In the method, a distribution of an amount of processing within a surface of a substrate by a plasma process performed on a film deposited on the substrate is obtained. Next, a flow speed of the plasma processing gas is adjusted by increasing the flow speed of the plasma processing gas supplied to a first area where the amount of processing is expected to be increased or by decreasing the flow speed of the plasma processing gas supplied to a second area where the amount of processing is expected to be decreased. Then, the plasma process is performed on the film deposited on the substrate by supplying the plasma processing gas having the adjusted flow speed into the predetermined plasma process area.

Abstract translation: 提供等离子体处理方法。 在该方法中，通过对沉积在基板上的膜进行等离子体处理，获得在基板的表面内的处理量的分布。 接下来，通过增加供给到期望增加处理量的第一区域的等离子体处理气体的流速或通过降低供给到等离子体处理气体的等离子体处理气体的流速来调节等离子体处理气体的流速 预计处理量减少的第二区域。 然后，通过将具有调节的流速的等离子体处理气体供给到预定的等离子体处理区域中，对沉积在基板上的膜进行等离子体处理。

公开(公告)号：US20150225849A1

公开(公告)日：2015-08-13

申请号：US14613656

申请日：2015-02-04

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Jun SATO ,  Masahiro MURATA ,  Kentaro OSHIMO ,  Tomoko SUGANO ,  Shigehiro MIURA

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/507 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

Abstract translation: 提供了一种处理基板的方法。 根据该方法，将处理气体供给到基板的表面，然后将分离气体供给到基板的表面。 此外，在第一等离子体生成单元和转台之间的距离设定为第一距离的第一状态下，将第一等离子体处理气体供给到基板的表面，并且向表面供给第二等离子体处理气体 在第二状态下，第二等离子体产生单元和转台之间的距离被设定为比第一距离短的第二距离。 此外，分离气体被供给到基板的表面。

公开(公告)号：US20130109197A1

公开(公告)日：2013-05-02

申请号：US13661148

申请日：2012-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki MURAKAMI ,  Toshiyuki IKEUCHI ,  Jun SATO ,  Yuichiro MOROZUMI ,  Kazuhide HASEBE

IPC: H01L21/316

CPC classification number: H01L21/32105 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method of forming a silicon oxide film includes forming a seed layer on a base, forming a silicon film on the seed layer, and forming the silicon oxide film on the base by oxidizing the silicon film and the seed layer.

Abstract translation: 形成氧化硅膜的方法包括在基底上形成种子层，在种子层上形成硅膜，并通过氧化硅膜和种子层在基底上形成氧化硅膜。

公开(公告)号：US20200370178A1

公开(公告)日：2020-11-26

申请号：US16875123

申请日：2020-05-15

Applicant: Tokyo Electron Limited

Inventor： Takashi CHIBA ,  Jun SATO

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  H01L21/02

Abstract: A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.