发明申请
US20140232467A1 HIGH-FREQUENCY AMPLIFIER MODULE AND HIGH-FREQUENCY AMPLIFIER MODULE UNIT
审中-公开
高频放大器模块和高频放大器模块
- 专利标题: HIGH-FREQUENCY AMPLIFIER MODULE AND HIGH-FREQUENCY AMPLIFIER MODULE UNIT
- 专利标题(中): 高频放大器模块和高频放大器模块
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申请号: US14237776申请日: 2012-08-24
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公开(公告)号: US20140232467A1公开(公告)日: 2014-08-21
- 发明人: Kenji Mukai , Kenichi Horiguchi , Morishige Hieda , Katsuya Kato , Yoshihito Hirano , Kazuya Yamamoto , Hiroyuki Joba , Teruyuki Shimura
- 申请人: Kenji Mukai , Kenichi Horiguchi , Morishige Hieda , Katsuya Kato , Yoshihito Hirano , Kazuya Yamamoto , Hiroyuki Joba , Teruyuki Shimura
- 申请人地址: JP Chiyoda-ku
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Chiyoda-ku
- 优先权: JP2011-236119 20111027
- 国际申请: PCT/JP2012/071423 WO 20120824
- 主分类号: H03F3/195
- IPC分类号: H03F3/195
摘要:
A high-frequency amplifier module includes a driver-stage amplifier 3 that amplifies an RF signal input thereto from an RF input terminal 1, and a final-stage amplifier 5 that amplifies the signal amplified by the driver-stage amplifier 3 and outputs the signal after the amplification to an RF output terminal 7. The driver-stage amplifier 3 is fabricated on a silicon substrate 11, while the final-stage amplifier 5 is fabricated on a gallium arsenide substrate. This configuration downsizes the cost while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on a gallium arsenide substrate 71.
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