发明申请
- 专利标题： SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS
- 专利标题（中）： 半导体基板和超临界干燥装置的超临界干燥方法
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申请号： US14283874申请日： 2014-05-21
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公开(公告)号： US20140250714A1公开(公告)日： 2014-09-11
- 发明人: Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazayuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
- 申请人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazayuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
- 专利权人： Kabushiki Kaisha Toshiba,Tokyo Electron Limited
- 当前专利权人： Kabushiki Kaisha Toshiba,Tokyo Electron Limited
- 优先权： JP2011-158296 20110719
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
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